Preliminary
Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
FEATURES
•
•
•
•
•
Ideal for low-noise, high-gain amplification applications
NF = 1.1 dB TYP., G
a
= 16 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
Maximum available power gain: MAG = 19 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
f
T
= 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
<R>
ORDERING INFORMATION
Part Number
2SC5508
2SC5508-T2
2SC5508-T2B
Order Number
2SC5508-A
2SC5508-T2-A
2SC5508-T2B-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
15 kpcs/reel
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Supplying Form
•
8 mm wide embossed taping
•
Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note
Free air.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
totNote
T
j
T
stg
Ratings
15
3.3
1.5
35
115
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
R
th j-c
R
th j-a
Ratings
150
650
Unit
°C
/W
°C
/W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 1 of 8
2SC5508
Chapter Title
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept Point
Symbol
I
CBO
I
EBO
h
FENote 1
f
T
|S
21e
|
NF
2
Conditions
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA
Note 5
, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA
Note 5
, f = 2 GHz
MIN.
–
–
50
20
14
–
–
–
–
–
–
TYP.
–
–
70
25
17
1.1
0.18
19
20
11
22
MAX.
200
200
100
–
–
1.5
0.24
–
–
–
–
Unit
nA
nA
–
GHz
dB
dB
pF
dB
dB
dBm
dBm
C
re Note 2
MAG
Note 3
MSG
Note 4
P
O (1 dB)
OIP
3
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MAG =
S
21
(K –
√
(K
2
– 1) )
S
12
S
12
4.
MSG =
S
21
5.
Collector current when P
O (1 dB)
is output
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB/YFB
T79
50 to 100
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 2 of 8
2SC5508
Chapter Title
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
250
Total Power Dissipation P
tot
(mW)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2 V
Collector Current I
C
(mA)
200
P
tot
-T
A
: Free air
P
tot
-T
A
: Mounted on ceramic board
(15 mm
×
15 mm, t = 0.6 mm)
P
tot
-T
C
: When case temperature
is specified
40
150
30
100
20
50
10
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature T
A
(˚C), Case Temperature T
C
(˚C)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 2 V
100
40
500
μ
A
450
μ
A
400
μ
A
350
μ
A
300
μ
A
250
μ
A
200
μ
A
150
μ
A
100
μ
A
I
B
= 50
μ
A
0
1
2
3
4
5
DC Current Gain h
FE
30
20
10
10
0
1
0.001
0.01
0.1
1
10
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Capacitance/f
T
Characteristics
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
0.50
30
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 2 GHz
25
20
15
10
5
0
f = 1 MHz
0.40
0.30
0.20
0.10
0
0
1.0
2.0
3.0
4.0
5.0
1
10
Collector Current I
C
(mA)
100
Collector to Base Voltage V
CB
(V)
Remark
The graphs indicate nominal characteristics.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 3 of 8
2SC5508
Gain Characteristics
Chapter Title
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
|S
21e
|
2
20
15
10
5
0
0.1
1.0
Frequency f (GHz)
10.0
MSG
V
CE
= 2 V
I
C
= 20 mA
MAG
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
| (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
0
f = 1 GHz
V
CE
= 2 V
MSG
|S
21e
|
2
30
25
20
15
10
5
0
f = 2 GHz
V
CE
= 2 V
MAG
MSG
|S
21e
|
2
2
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Output Characteristics
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
f = 1 GHz
V
CE
= 2 V
Collector Current I
C
(mA)
Output Power P
out
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
125
20
f = 2 GHz
V
CE
= 2 V
P
out
125
P
out
10
75
10
75
5
I
C
0
50
5
I
C
0
50
25
25
–5
–20
0
–15
–10
–5
0
5
Input Power P
in
(dBm)
–5
–20
–15
–10
–5
0
0
5
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 4 of 8
Collector Current I
C
(mA)
Output Power P
out
(dBm)
15
100
15
100
2SC5508
Noise Characteristics
Chapter Title
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
6
f = 1.0 GHz
V
CE
= 2 V
G
a
Associated Gain G
a
(dB)
4
3
2
1
0
20
15
10
5
0
100
4
3
2
1
0
G
a
20
15
NF
NF
10
5
0
100
1
10
Collector Current I
C
(mA)
1
10
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
6
f = 2.0 GHz
V
CE
= 2 V
Associated Gain G
a
(dB)
4
3
2
1
0
G
a
20
15
4
G
a
20
15
NF
3
2
1
0
NF
10
5
0
100
10
5
0
100
1
10
Collector Current I
C
(mA)
1
10
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products]
→
[RF Devices]
→
[Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 5 of 8
Associated Gain G
a
(dB)
25
5
f = 2.5 GHz
V
CE
= 2 V
30
25
Noise Figure NF (dB)
Noise Figure NF (dB)
Associated Gain G
a
(dB)
25
5
f = 1.5 GHz
V
CE
= 2 V
30
25
Noise Figure NF (dB)
Noise Figure NF (dB)
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