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2SC5606-T1

Description
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
CategoryDiscrete semiconductor    The transistor   
File Size191KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SC5606-T1 Overview

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

2SC5606-T1 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)0.035 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.115 W
surface mountYES
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SC5606-T1 Related Products

2SC5606-T1 2SC5606 2SC5606-A 2SC5606-T1-A
Description NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
Reach Compliance Code compli compli compli compli
Maximum collector current (IC) 0.035 A 0.035 A 0.035 A 0.035 A
Configuration Single Single SINGLE SINGLE
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
Base Number Matches 1 1 1 1
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