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2SC5658-HF

Description
General Purpose Transistor
File Size89KB,5 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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2SC5658-HF Overview

General Purpose Transistor

General Purpose Transistor
Comchip
SMD Diode Specialist
2SC5658-HF
(NPN)
RoHS Device
Halogen Free
Features
-Low Cob.
SOT-723
0.011(0.270)
0.007(0.170)
1
0.049(1.25) 0.031(0.800)
0.045(1.15)
Typ.
2
0.033(0.850)
0.030(0.750)
0.049(1.250)
0.045(1.150)
0.015(0.370)
0.011(0.270)
Mechanical data
-Case: SOT-723, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
3
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
1
3
0.002(0.050)
Max.
0.006(0.15)
Max.
0.020(0.50)
Max.
2
Absolute Maximum Ratings (at T
A
=25°C )
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current- continuous
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Value
60
50
7
150
100
150
-55 ~ +150
Unit
V
V
V
mA
µA
µA
µA
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Output capacitance
Conditions
I
C
=50μA , I
E
=0
I
C
=1mA , I
B
=0
I
E
=50μA , I
C
=0
V
CB
=60V , I
E
=0
V
EB
=7V , I
C
=0
V
CE
=6V , I
C
=1mA
I
C
=50mA , I
B
=5mA
V
CE
=12V , I
C
=2mA
f=100MH
Z
V
CB
=12V , I
E
=0
f=1MH
Z
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
ob
Min
60
50
7
Typ
Max
Unit
V
V
V
0.1
0.1
120
560
0.4
180
3.5
µA
µA
V
MH
Z
pF
Rank
Range
Q
120~270
R
180~390
S
270~560
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR07
REV: A
Page 1
Comchip Technology CO., LTD.

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