CREAT BY ART
2SC5658-Q/R/S
NPN Transistor
SOT-723
Small Signal Product
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Low C
ob
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Complements the 2SA2029
Mechanical Data
Case : SOT-723 small outline plastic package
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260℃/10s
1. BASE
2. EMITTER
3. COLLECTOR
Ordering Information (example)
Part No.
2SC5658-Q
Package
SOT-723
Packing
8K / 7" Reel
Packing
code
RM
Packing code
(Green)
RMG
Marking
BQ
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
A
=25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Limits
60
50
7
150
100
150
- 55 to + 150
Units
V
V
V
mA
mW
O
O
C
C
Parameter
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer ratio
Collector Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Classification of h
FE
Rank
Range
Q
120~270
at I
C
=50uA, I
E
=0
at I
E
=50uA, I
C
=0
at V
CB
=60V, I
E
=0
at V
EB
=7V, I
C
=0
at V
CE
=6V, I
C
=1mA
at I
C
=50mA, I
B
=5mA
at V
CE
=12V, I
C
=2mA, f=100MHz
at V
CB
=12V, f=1MHz
Collector Emitter Breakdown Voltage at I
C
=1mA, I
B
=0
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
60
50
7
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
180
-
Max.
-
-
-
0.1
0.1
560
0.4
-
3.5
Units
V
V
V
uA
uA
V
MHz
pF
R
180~390
S
270~560
Version：A13
Small Signal Product
FIG.1 Static Characteristic
7
Ic(mA), COLLECTOR CURRENT
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
V
CE
(V), COLLECTOR EMITTER VOLTAGE
20uA
16uA
14uA
12uA
10uA
8uA
6uA
4uA
I
E
=2uA
8
DC CURRENT GAIN, h
FE
18uA
1000
FIG. 2 h
FE
- I
C
TA=100℃
TA=25℃
100
COMMON EMMITTER
V
CE
=6V
10
0.1
1.0
10.0
100.0
COLLECTOR CURRENT I
C
(mA)
FIG. 3 V
BE(sat)
- I
C
1000
TA=25℃
COLLECTOR-EMITTER SATURATION
VOLTAGE, V
CE
(sat),
BASE-EMITTER SATUTATION
VOLTAGE, V
BE(sat)
(mV)
1000
FIG. 4 V
CE(sat)
- I
C
TA=100℃
100
TA=100℃
β=10
0.1
1
10
100
TA=25℃
10
0.1
1
10
Ic(mA), COLLECTOR CURRENT
β=10
100
100
Ic(mA), COLLECTOR CURRENT
FIG. 5 I
C
- V
BE
100
f
T
(MHz), TRANSTION FREQUENCY
COLLECTOR CURRENT, IC(mA)
1000
FIG. 6 f
T
- I
C
10
TA=100℃
TA=25℃
100
1
0
0.3
0.6
COMMON EMMITTER
V
CE
=6V
0.9
1.2
COMMON EMMITTER
V
CE
=12V
T
A
=25℃
10
0.1
1
10
100
Ic(mA), COLLECTOR CURRENT
V
BE
(V), BASE EMITTER VOLTAGE
Version:A13
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