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2SC5658-Q

Description
NPN Transistor Small Signal Product
File Size219KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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2SC5658-Q Overview

NPN Transistor Small Signal Product

CREAT BY ART
2SC5658-Q/R/S
NPN Transistor
SOT-723
Small Signal Product
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Low C
ob
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Complements the 2SA2029
Mechanical Data
Case : SOT-723 small outline plastic package
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260℃/10s
1. BASE
2. EMITTER
3. COLLECTOR
Ordering Information (example)
Part No.
2SC5658-Q
Package
SOT-723
Packing
8K / 7" Reel
Packing
code
RM
Packing code
(Green)
RMG
Marking
BQ
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
A
=25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Limits
60
50
7
150
100
150
- 55 to + 150
Units
V
V
V
mA
mW
O
O
C
C
Parameter
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer ratio
Collector Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Classification of h
FE
Rank
Range
Q
120~270
at I
C
=50uA, I
E
=0
at I
E
=50uA, I
C
=0
at V
CB
=60V, I
E
=0
at V
EB
=7V, I
C
=0
at V
CE
=6V, I
C
=1mA
at I
C
=50mA, I
B
=5mA
at V
CE
=12V, I
C
=2mA, f=100MHz
at V
CB
=12V, f=1MHz
Collector Emitter Breakdown Voltage at I
C
=1mA, I
B
=0
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
60
50
7
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
180
-
Max.
-
-
-
0.1
0.1
560
0.4
-
3.5
Units
V
V
V
uA
uA
V
MHz
pF
R
180~390
S
270~560
Version:A13

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