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2SC5661_09

Description
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)
File Size184KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

2SC5661_09 Overview

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Features
1) High transition frequency. (Typ. f
T
= 1.5GHz)
2) Small rbb’Cc and high gain. (Typ. 6ps)
3) Small NF.
Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit
(pieces)
Denotes h
FE
Dimensions
(Unit : mm)
2SC5661
2SC5661
VMT3
NP
AC
T2L
8000
2SC4725
EMT3
NP
AC
TL
3000
2SC4082
UMT3
NP
1C
T106
3000
2SC3837K
SMT3
NP
AC
T146
3000
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
2SC4725
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collector
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC5661, 2SC4725
Collector power
dissipation
2SC4082, 2SC3837K
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
20
3
50
0.15
0.2
150
−55
to
+150
Unit
V
V
V
mA
W
°C
°C
2SC4082
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
2.9
0.4
(3)
1.6
2.8
2SC3837K
1.1
0.8
(2)
(1)
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
Each lead has same dimensions
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
20
3
82
600
Typ.
1500
0.9
6
4.5
Max.
0.5
0.5
0.5
180
1.5
13
Unit
V
V
V
μA
μA
V
MHz
pF
ps
dB
I
C
=
10μA
I
C
=
1mA
I
E
=
10μA
V
CB
=
15V
V
EB
=
2V
I
C
/I
B
=
20mA/4mA
V
CE
/I
C
=
10V/10mA
V
CE
=
10V , I
E
= −
10mA , f
=
200MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
V
CB
=
10V , I
C
=
10mA , f
=
31.8MHz
V
CE
=
12V , I
C
=
2mA , f
=
200MHz , Rg
=
50Ω
Conditions
rbb'·Cc
NF
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.C
0.3Min.
(1) Emitter
(2) Base
(3) Collector
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