Power transistor (60V, 2A)
2SC5880
Features
1) High speed switching.
(tf : Typ. : 35ns at I
C
= 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at I
C
= 1.0A, I
B
= 100mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2093
Dimensions
(Unit : mm)
ATV
Applications
Low frequency amplifier
High speed switching
(1) Emitter
(2) Collector
(3) Base
Taping specifications
Symbol : C5880
Structure
NPN Silicon epitaxial planar transistor
Packaging
specifications
Package
Type
Taping
TV2
2500
Code
Basic ordering unit (pieces)
2SC5880
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
60
60
6
2
4
1.0
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
Pulsed
t
j
t
stg
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2011 ROHM Co., Ltd. All rights reserved.
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2011.03 - Rev.C
2SC5880
Electrical
characteristics
(Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Min.
60
60
6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
1.0
1.0
Unit
V
V
V
μA
μA
Condition
I
C
=1mA
I
C
=100μA
I
E
=100μA
V
CB
=40V
V
EB
=4V
I
C
=1.0A
I
B
=0.1A
V
CE
=2V
I
C
=100mA
V
CE
=10V
I
E
= −100mA
f=10MHz
V
CB
=10V
I
E
=0mA
f=1MHz
I
C
=2A
I
B1
=200mA
I
B2
= −200mA
V
CC
25V
Data Sheet
Collector-emitter saturation voltage
DC current gain
V
CE (sat)
h
FE
−
120
200
500
390
mV
−
−
∗
Transition frequency
f
T
−
200
−
MHz
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗Non
repetitive pulse
Cob
t
on
t
stg
t
f
−
−
−
−
10
50
120
35
−
−
−
−
pF
ns
ns
ns
h
FE
RANK
Q
120−270
R
180−390
Electrical
characteristic curves
10
V
CE
=2V
1000
Ta=25°C
1000
V
CE
=2V
COLLECTOR CURRENT : I
C
(A)
1
Ta=125°C
Ta=25°C
Ta=
−40°C
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
100
V
CE
=5V
V
CE
=3V
V
CE
=2V
100
Ta=125°C
Ta=25°C
Ta=
−40°C
0.1
10
10
0.01
0
0.5
1
1.5
1
0.001
0.01
0.1
1
10
1
0.001
0.01
0.1
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded Emitter
Propagation Characteristics
Fig.2 DC Current Gain vs.
Collector Current (Ι)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
10
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
10
I
C
/ I
B
=10
/ 1
10
I
C
/ I
B
=10
/ 1
BASE EMITTER SATURATION
VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
1
I
C
/ I
B
=20
/ 1
I
C
/ I
B
=10
/ 1
1
Ta=125°C
Ta=25°C
Ta=
−40°C
1
0.1
0.1
0.1
Ta=125°C
Ta=25°C
Ta=
−40°C
0.01
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
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2011.03 - Rev.C
2SC5880
Data Sheet
1000
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C
V
CE
=10V
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
100
Ta=25°C
f=1MHz
1000
tstg
100
SWITCHING TIME : (ns)
Ta=25°C
V
CC
=25V
I
C
/ I
B
=10
/ 1
10
100
tf
ton
10
1
0.001
0.01
0.1
1
10
1
0.1
1
10
100
10
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
BASE TO COLLECTOR VOLTAGE : V
CB
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.7 Transition Frequency
Fig.8 Collector Output Capacitance
Fig.9 Switching Time
Switching
characteristics measurement circuits
R
L
=12.5Ω
V
IN
I
B1
I
C
V
CC
25V
I
B2
P
W
P
W
50 S
Duty cycle
≤
1%
I
B1
Base current
waveform
90%
Collector current
waveform
t
on
I
C
10%
t
stg
t
f
I
B2
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2011.03 - Rev.C
Notice
Notes
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