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2SD1669

Description
Silicon NPN Power Transistors
File Size41KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SD1669 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SB1136
・Low
collector saturation voltage
・Wide
safe operating area
APPLICATIONS
・For
relay drivers,high-speed inverters,
converters,and other general high-current
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1669
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
50
6
12
15
2
W
UNIT
V
V
V
A
A
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