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2SD1733TLQ

Description
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size103KB,4 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
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2SD1733TLQ Overview

1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD1733TLQ Parametric

Parameter NameAttribute value
Maximum collector current1 A
Maximum Collector-Emitter Voltage80 V
Number of terminals2
Processing package descriptionROHS COMPLIANT, CPT3, SC-63, 3 PIN
each_compliYes
EU RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor120
jesd_30_codeR-PSSO-G2
jesd_609_codee2
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeNPN
wer_dissipation_max__abs_10 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingTIN COPPER
Terminal formGULL WING
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency100 MHz
Power Transistor (80V, 1A)
2SD1898 / 2SD1733
Features
1) High V
CEO
, V
CEO
=80V
2) High I
C
, I
C
=1A (DC)
3) Good h
FE
linearity
4) Low V
CE
(sat)
5) Complements the 2SB1260 / 2SB1181
Dimensions
(Unit : mm)
2SD1898
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5 ±0.1
4.0±0.3
2.5
+0.2
−0.1
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−0.05
Structure
Epitaxial planer type
NPN silicon transistor
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : DF
(1) Base
(2) Collector
(3) Emitter
2SD1733
1.5
±
0.3
6.5
±
0.2
5.1
+
0.2
0.1
C0.5
2.3
+
0.2
0.1
0.5
±
0.1
5.5
+
0.3
0.1
0.75
0.9
0.65
±
0.1
0.55
±
0.1
2.3
±
0.2
2.3
±
0.2
1.0
±
0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
2.5
9.5
±
0.5
0.9
1.5
(1) Base
(2) Collector
(3) Emitter
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
120
80
5
1
2
2SD1898
Collector power
dissipation
2SD1733
Junction temperature
Storage temperature
Tj
Tstg
P
C
0.5
2
1
10
150
−55
to
+150
Unit
V
V
V
A (DC)
A (Pulse)
∗1
W
W
W
W (Tc=25°C)
°C
°C
∗2
∗1
Pw=20ms, duty=1 / 2
∗2
When mounted on a 40×40×0.7mm ceramic board.
www.rohm.com
c
2012 ROHM Co., Ltd. All rights reserved.
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