Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1789
DESCRIPTION
・With
ITO-220 package
・Switching
power transistor
・DARLINGTON
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
7
±4
±6
0.3
0.5
25
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1789
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=1A; I
B
=2mA
I
C
=1A; I
B
=2mA
V
CB
=200V; I
E
=0
V
CE
=200V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=3V
I
C
=0.4A ; V
CE
=10V
1500
20
MIN
TYP.
MAX
1.5
2.0
0.1
0.1
5
30000
MHz
UNIT
V
V
mA
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1A;I
B1
=I
B2
=2mA,
R
L
=25Ω
V
BB2
=4V
2.0
12
5.0
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1789
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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