UNISONIC TECHNOLOGIES CO., LTD
2SD1804
HIGH CURRENT SWITCHING
APPLICATIONS
1
NPN SILICON TRANSISTOR
FEATURES
* Low collector-to-emitter saturation voltage
* High current and high f
T
* Excellent linerarity of h
FE
.
* Fast switching time
* Small and slim package making it easy to make UTC
2SD1804
applied sets smaller.
TO-252
1
TO-251
1
TO-220
ORDERING INFORMATION
Normal
2SD1804-x-TA3-T
2SD1804-x-TM3-T
2SD1804-x-TN3-R
Ordering Number
Lead Free
Halogen Free
2SD1804L-x-TA3-T 2SD1804G-x-TA3-T
2SD1804L-x-TM3-T 2SD1804G-x-TM3-T
2SD1804L-x-TN3-R 2SD1804G-x-TN3-R
Package
TO-220
TO-251
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-006,E
2SD1804
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(PULSE)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(PULSE)
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
60
V
50
V
6
V
8
A
12
A
TO-220
2
T
A
=25°C
W
TO-251/TO-252
1
Collector Dissipation
P
D
TO-220
65
T
C
=25°C
W
TO-251/TO-252
20
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
V
CE(SAT)
V
BE(SAT)
t
STG
t
F
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1mA, R
BE
=∞
I
E
=10μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=6A
V
CE
=5V, I
C
=1A
V
CE
=10V, f=1MHz
I
C
=4A, I
B
=0.2A
I
C
=4A, I
B
=0.2A
See test circuit
See test circuit
MIN
60
50
6
TYP
MAX UNIT
V
V
V
1
μA
1
μA
400
MHz
pF
mV
V
ns
ns
70
35
180
65
200
0.95
500
20
400
1.3
CLASSIFICATION OF h
FE1
RANK
RANGE
Q
70-140
R
100-200
S
140-280
T
200-400
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www.unisonic.com.tw
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QW-R209-006,E
2SD1804
TEST CIRCUIT
NPN SILICON TRANSISTOR
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www.unisonic.com.tw
3 of 5
QW-R209-006,E
2SD1804
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Colletcor Current, I
C
-A
Colletcor Current, I
C
- A
Colletcor Current, I
C
(A)
5
Gain-Bandwidth Product, f
T
-MHz
3
2
5
V
CE
=5V
Output Capacitance, C
OB
-pF
3
2
100
7
5
3
2
DC Current Gain, h
FE
Colletcor Current, I
C
-A
Colletcor to Base Voltage, V
CB
(V)
f=1MHz
100
7
5
3
2
10
2 3 5 7 0.1
2 3 5 71.0
f
T
- I
C
2 3 5 7 10
10
5 7 1.0
2 3
5 7 10
C
OB
- V
CB
2 3
5 7 100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R209-006,E
2SD1804
TYPICAL CHARACTERISTICS(Cont.)
Collector Current, I
C
(A)
Collector to Emitter
Saturation Voltage, V
CE(SAT)
- mV
1000
7
5
3
2
100
7
5
3
2
T
A
=25℃
T
A
=-25℃
2 3 5 710
T
A
=75℃
I
C
/I
B
=20
Base to Emitter
Saturation Voltage, V
BE(SAT)
-V
10
7
5
3
2
1.0
7
NPN SILICON TRANSISTOR
Collector Current, I
C
(A)
I
c
/I
B
=20
T
A
=-25℃
10
5 70.01 2 3 5 70.1 2 3 5 71.0
V
CE(SAT)
- I
C
T
A
=25℃
T
A
=75℃
3
2
2 3 5 7 1.0 2 3 5 7 10
5 70.01 2 3 5 7
0.1
V
BE(SAT)
- I
C
5
Colletcor to Emitter Voltage, V
CE
(V)
2
10
7
5
3
2
1.0
7
5
3
2
Icp
I
C
D
Ambient Temperature, Ta (℃)
24
Collector Dissipation, P
C
- W
1ms
20
16
12
8
4
1
00
10ms
C
Collector Current, I
C
- A
100ms
O
pe
n
tio
ra
0.1
7
5
3 T
C
=25℃, One Pulse For
2 PNP,minus sign is omitted.
0.01
0.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100
ASO
5
℃
=2
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D
C
O
r
pe
io
at
Ta
n
=2
T
C
5
℃
No heat sink
160
20
40
60
80
P
D
-Ta
100 120 140
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QW-R209-006,E
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