INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1850
DESCRIPTION
·High
Voltage
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1500
V
V
CES
Collector-Emitter Voltage
1500
V
V
CEO
Collector-Emitter Voltage
700
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
7
A
I
CP
Collector Current-Peak
20
A
I
B
B
Base Current- Continuous
Collector Power Dissipation
@T
a
=25℃
3
A
3
W
P
C
Collector Power Dissipation
@T
C
=25℃
T
j
Junction Temperature
120
150
℃
T
stg
Storage Temperature Range
-55-150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
h
FE-1
h
FE-2
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
DC Current Gain
CONDITIONS
I
E
= 1mA; I
C
= 0
I
C
= 6A; I
B
= 1.5A
B
2SD1850
MIN
7
TYP
MAX
UNIT
V
8.0
1.5
5
4.5
10
1.0
2
25
V
V
I
C
= 6A; I
B
= 1.5A
B
I
C
= 1A; V
CE
= 5V
I
C
= 6A; V
CE
= 5V
V
CB
= 1000V; I
E
= 0
μA
mA
MHz
I
CBO
Collector Cutoff Current
V
CB
= 1500V; I
E
= 0
f
T
Transition Frequency
I
C
= 1A; V
CE
= 10V
Switching Times, Resistive Load
t
s
t
f
Storage Time
I
C
= 6A; I
B1
= 1.5A; I
B2
= -3A,
V
CC
= 200V
Fall Time
0.2
1.5
μs
μs
isc Website：www.iscsemi.cn
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