Medium Power Transistor
(Motor, Relay drive) (6010V, 2A)
2SD2143
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
±
10
60
±
10
6
2
3
∗1
1
10
150
−55
to
+
150
Unit
1.0
Dimensions
(Unit : mm)
0.9
0.75
5.5
1.5
(1)
2.3
5.1
0.9
(3)
(2)
2.3
0.65
C0.5
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
1 Single pulse Pw=100ms
0.5
0.8Min.
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25
°C)
°C
°C
0.5
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
Packaging
specifications and h
FE
Type
Package
h
FE
2SD2143
CPT3
1k to 10k
−
TL
2500
Marking
Code
Basic ordering unit (pieces)
Inner
circuit
C
B
R
1
E : Emitter
B : Base
C : Collector
R
1
R
2
R
2
E
3.5kΩ
300Ω
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
50
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
80
25
Max.
70
70
1.0
3
1.5
10000
−
−
Unit
V
V
μA
mA
V
−
MHz
pF
I
C
=50μA
I
C
=5mA
V
CB
=40V
V
EB
=5V
I
C
/I
B
=1A/1mA
Conditions
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
6.5
∗
Transition frequency
Output capacitance
∗
Measured using pulse current.
V
CE
=2V,
I
C
=1A
V
CE
=5V,
I
E
= −0.1A,
f=30MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
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2012 ROHM Co., Ltd. All rights reserved.
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2012.01 - Rev.C
2SD2143
Electrical
characteristics curves
2.0
1.8
COLLECTOR CURRENT : I
C
(A)
500μA
450μA
400μA
μ
300
A
Data Sheet
Ta=25°C
2.0
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : Ic (A)
500μA
1.8
450μA
400μA
1.6
350μA
A
0
μ
30
Ta=25°C
A
5
V
CE
=2V
2
1
0.5
Ta=
100
˚C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
250
μ
A
25
0
μ
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I
B
00
μ
I
B
=2
A
0
μ
A
=20
0.2
0.1
0.05
25˚C
0.01
3
4
5
2
4
6
8
10
0.001
0.5
1
1.5
−
25˚
C
2
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Groundede emitter output
characteristics (
Ι
)
Fig.2 Grounded emitter output
characteristics (
ΙΙ
)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
Ta=25°C
V
CE
=4V
10000
5000
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
100
50
20
10
5
2
I
C
/I
B
=1000
Ta=25°C
DC CURRENT GAIN : h
FE
2000
1000
500
200
100
50
20
10
0.001
0.01
0.1 0.2 0.5 1 2
5 10
V
CE
=2V
DC CURRENT GAIN : h
FE
2000
1000
500
Ta
=
1
200
100
50
20
10
0.001
−
2
5
°
C
00
°
C
25°C
1
0.5
0.2
500
0.01
0.1 0.2 0.5 1 2
5 10
0.01
0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs. collector current (
Ι )
Fig.5 DC current gain
vs. collector current (
ΙΙ )
Fig.6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=1000
COLLECTOR OUTPUT
CAPACITANCE : C
ob
(pF)
100
50
20
10
5
2
1
200
100
COLLECTOR CURRENT : Ic (A)
Ta=25°C
I
E
=0A
f=1MHz
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
Ta=25°C
Single
Nonrepetitive
Pulse
Ic max (pulse)
DC
S
m
00
=1
Pw
Pw=
1mS
=1
Pw
50
0m
S
Ta=
−25°C
100°C
20
0.5
0.2
10
25°C
0.01
0.1 0.2 0.5 1
2
5 10
5
0.05 0.1 0.2
0.5
1
2
5
10 20
50
2m
1m
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (A. S. O)
2SD2143 (CPT)
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2012 ROHM Co., Ltd. All rights reserved.
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2012.01 - Rev.C
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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