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2SD2033

Description
isc Silicon NPN Power Transistor
File Size83KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD2033 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD2033
DESCRIPTION
·Good
Linearity of h
FE
·
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·Complement
to Type 2SB1353
APPLICATIONS
·Designed
for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
1.5
A
1.8
W
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
Junction Temperature
20
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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