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2SD2107

Description
isc Silicon NPN Power Transistor
File Size85KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD2107 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD2107
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V (Min)
·Low
Collector Saturation Voltage
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
70
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
4
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
8
A
25
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
2
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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