INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD2108
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 80V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 1.5V(Max) @I
C
= 4A
·High
DC Current Gain
: h
FE
= 1000(Min) @ I
C
= 4A, V
CE
= 3V
APPLICATIONS
·Designed
for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
80
V
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
7
V
I
C
I
CM
Collector Current-Continuous
8
A
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
12
A
25
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
2
150
℃
℃
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD2108
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 25mA ; R
BE
=
∞
80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1mA; I
E
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 50mA; I
C
= 0
7
V
V
CE(
sat
)-1
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 8mA
B
1.5
V
V
CE(
sat
)-2
Collector-Emitter Saturation Voltage
I
C
= 8A; I
B
= 80mA
B
3.0
V
V
BE(
sat
)-1
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 8mA
B
2.0
V
V
BE(
sat
)-2
I
CBO
Base-Emitter Saturation Voltage
I
C
= 8A; I
B
= 80mA
B
3.5
V
μA
Collector Cutoff Current
V
CB
= 65V; I
E
= 0
V
CE
= 65V; R
BE
=
∞
10
I
CEO
Collector Cutoff Current
10
μA
h
FE
DC Current Gain
I
C
= 4A; V
CE
= 3V
1000
20000
isc Website：www.iscsemi.cn
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