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2SD2166Q

Description
5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size85KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SD2166Q Overview

5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD2166Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
2SD2098 / 2SD2118 / 2SD2097
Transistors
Low V
CE(sat)
transistor (strobe flash)
2SD2098 / 2SD2118 / 2SD2097
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.25V (Typ.)
(I
C
/I
B
= 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.
!
External dimensions
(Units : mm)
2SD2098
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
2.5
+0.2
−0.1
4.0±0.3
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−0.05
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
!
Structure
Epitaxial planar type
NPN silicon transistor
Abbreviated symbol : AH∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD2118
1.5±0.3
6.5
±
0.2
5.1
+0.2
−0.1
C0.5
2.3
+
0.2
0.1
0.5
±
0.1
5.5
+
0.3
0.1
0.75
0.9
0.65
±
0.1
0.55
±
0.1
2.3
±
0.2 2.3
±
0.2
1.0
±
0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD2097
6.8±0.2
2.5±0.2
0.65Max.
1.0
0.5±0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
14.5±0.5
4.4±0.2
0.9
(1) Emitter
(2) Collector
(3) Base
Denotes h
FE
2.5
9.5
±
0.5
0.9
1.5

2SD2166Q Related Products

2SD2166Q 2SD2098T100Q 2SD2166R
Description 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to
package instruction FLANGE MOUNT, R-PSFM-T3 MPT3, SC-62, 3 PIN FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow _compli unknow
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED COLLECTOR ISOLATED
Maximum collector current (IC) 5 A 5 A 5 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 180
JESD-30 code R-PSFM-T3 R-PSSO-F3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 10 W 2 W 10 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES NO
Terminal form THROUGH-HOLE FLAT THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1
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