2SD2098 / 2SD2118 / 2SD2097
Transistors
Low V
CE(sat)
transistor (strobe flash)
2SD2098 / 2SD2118 / 2SD2097
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.25V (Typ.)
(I
C
/I
B
= 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.
!
External dimensions
(Units : mm)
2SD2098
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
2.5
+0.2
−0.1
4.0±0.3
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−0.05
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
!
Structure
Epitaxial planar type
NPN silicon transistor
Abbreviated symbol : AH∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD2118
1.5±0.3
6.5
±
0.2
5.1
+0.2
−0.1
C0.5
2.3
+
0.2
−
0.1
0.5
±
0.1
5.5
+
0.3
−
0.1
0.75
0.9
0.65
±
0.1
0.55
±
0.1
2.3
±
0.2 2.3
±
0.2
1.0
±
0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD2097
6.8±0.2
2.5±0.2
0.65Max.
1.0
0.5±0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
14.5±0.5
4.4±0.2
0.9
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
FE
2.5
9.5
±
0.5
0.9
1.5
2SD2098 / 2SD2118 / 2SD2097
Transistors
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
2SD2098
Collector power
dissipation
P
C
Limits
50
20
6
5
10
0.5
2
2SD2118
2SD2097
Junction temperature
Storage temperature
Tj
Tstg
1
10
1
150
−55~+150
W(Tc=25°C)
W
°C
°C
∗3
Unit
V
V
V
A(DC)
A(Pulse)
∗1
W
∗2
∗1
Single pulse Pw=10ms
∗2
When mounted on a 40×40×0.7 mm ceramic board.
∗3
Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm
2
or larger.
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.25
−
150
30
Max.
−
−
−
0.5
0.5
1.0
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=40V
V
EB
=5V
Conditions
I
C
/I
B
=4A/0.1A
V
CE
=2V,
I
C
=0.5A
V
CE
=6V,
I
E
=−50mA,
f=100MHz
V
CE
=20V,
I
E
=0A,
f=1MHz
∗
∗
!
Packaging specifications and h
FE
Package
Code
Type
2SD2098
2SD2118
2SD2097
h
FE
QR
QR
QR
−
−
−
Basic ordering unit (pieces)
T100
1000
Taping
TL
2500
−
TV2
2500
−
−
h
FE
values are classified as follows :
Item
h
FE
Q
120~270
R
180~390
2SD2098 / 2SD2118 / 2SD2097
Transistors
!
Electrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
10
5
V
CE
=2V
Ta=100°C
25°C
−25°C
5
50mA
45mA
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
4
Ta=25°C
30mA
25mA
20mA
15mA
40mA
35mA
10mA
5000
2000
1000
500
200
100
50
20
10
Ta=25°C
V
CE
=5V
2V
1V
3
2
5mA
1
I
B
=0mA
1.6
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
0.4
0.8
1.2
5
1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current (
Ι
)
5000
2000
DC CURRENT GAIN : h
FE
V
CE
=1V
5000
2000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
Ta=100°C
25°C
−25°C
2
1
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
1000
500
200
100
50
20
10
Ta=100°C
25°C
−25°C
1000
500
200
100
50
20
10
0.2
0.1
0.05
0.02
I
C
/I
B
=50
40
30
10
5
1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
5
1m 2m 5m0.010.02 0.050.10.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current (
ΙΙ
)
Fig.5 DC current gain vs.
collector current (
ΙΙΙ
)
Fig.6 Collector-emitter
saturation voltage vs.
collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
Ta=100°C
25°C
−25°C
l
C
/l
B
=10
l
C
/l
B
=30
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
Ta=100°C
25°C
−25°C
2
1
0.5
0.2
0.1
0.05
0.02
Ta=100°C
25°C
−25°C
l
C
/l
B
=40
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5
10
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
ΙΙ
)
Fig.8 Collector-emitter
saturation voltage vs.
collector current (
ΙΙΙ
)
Fig.9 Collector-emitter
saturation voltage vs.
collector current (IV)
2SD2098 / 2SD2118 / 2SD2097
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
Ta=100°C
25°C
−25°C
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
=50
500
200
100
50
20
10
5
2
Ta=25°C
V
CE
=6V
1000
500
Ta=25°C
f=1MHz
I
C
=0A
I
E
=0A
Cib
200
100
50
0.2
0.1
0.05
0.02
Cob
20
10
0.1 0.2
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5
10
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
EMITTER CURRENT : I
E
(A)
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.10 Collector-emitter
saturation voltage vs.
collector current (V)
Fig.11 Gain bandwidth product vs.
emitter current
Fig.12 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
50
COLLECTOR CURRENT : I
C
(A)
20
10
5
2
1
500m
200m
100m
50m
20m
10m
COLLECTOR CURRENT : I
C
(A)
Ic max (Pulse)
Pw
=
1
00
Pw
Ta=25(°C)
Single pulse
Recommended land
pattern
50
20
10
5
2
1
500m
200m
100m
50m
20m
10m
Ic max (Pulse)
Ta=25 (°C)
Single pulse
µ
s
00
=
1
s
Pw
m
=
1
s
Pw
10m
=
Pw
=
1
0m
Ic max (Pulse)
Pw
m
s
=
1
s
D
C
00
ms
0.2 0.5 1
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.13 Safe operating area
(2SD2098)
DC
2
5 10 20 50 100 200 500
0.2 0.5 1
2
5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.14 Safe operating area
(2SD2118)
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