Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2454
DESCRIPTION
・With
TO-3P(H)IS package
・High
voltage ;high speed
・Low
saturation voltage
・Built-in
damper diode
APPLICATIONS
・Horizontal
deflection output for color TV
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1700
600
5
7
14
3.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2454
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
V
F
C
ob
f
T
PARAMETER
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
Collector output capacitance
Transition frequency
CONDITIONS
I
E
=400mA ;I
C
=0
I
C
=6A; I
B
=1.2A
I
C
=6A; I
B
=1.2A
V
CB
=1700V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
F
=7A
I
E
=0 ; V
CB
=10V,f=1MHz
I
C
=0.1A ; V
CE
=10V
1
66
8
5
1.5
250
3
13
8
2.0
pF
MHz
0.9
MIN
5
5
1.5
1.0
200
TYP.
MAX
UNIT
V
V
V
mA
μA
Switching times : inductive load
t
s
t
f
Storage time
I
CP
=6A;I
B1
=1A
f
H
=15.75kHz
Fall time
0.3
0.7
9
12
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2454
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2454
4
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