ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4409B uses advanced trench technology to provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
V
DS
(V)=-30V
I
D
=-14A (V
GS
=-10V)
R
DS(ON)
＜11mΩ
(V
GS
=-10V)
R
DS(ON)
＜13mΩ
(V
GS
=-4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=70
O
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Max
-30
±20
-14
-11
-70
3
2.1
W
O
Unit
V
V
A
Drain Current (Pulse) * B
Power Dissipation
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
C
Packaging Type
SOP-8
Ordering information
ACE4409B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2
1
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
T
A
=25 C unless otherwise noted
O
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)DSS
I
DSS
I
GSS
R
DS(ON)
V
GS(th)
g
FS
V
SD
I
S
Conditions
Static
V
GS
=0V, I
D
=-250uA
V
DS
=-30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
D
=-15A
V
GS
=-4.5V, I
D
=-10A
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=-5V, I
D
=-15A
I
SD
=-1A, V
GS
=0V
Min.
-30
Typ.
Max.
Unit
V
-1
100
8
10
-1
-1.3
50
-0.71
-1
-2.7
11
13
-2
uA
nA
mΩ
V
S
V
A
Switching
Q
g
Q
gs
Q
gd
T
d(on)
t
f
t
d(off)
t
f
Dynamic
C
iss
C
oss
C
rss
V
DS
=-15V, V
GS
=0V
f=1MHz
3887.7
577.33
42.72
pF
V
DS
=-15V, R
L
=15Ω,
V
GS
=-10V, R
GEN
=6Ω
V
DS
=-15V, I
D
=-15A
V
GS
=-10V
37.08
10.12
11.24
19.52
10.12
137.6
55.32
48.2
13.16
14.61
39.04
20.34
275.2
110.64
ns
nC
Note: 1. The value of R θ
JA
is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with T
A
=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
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