Analog Power
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AM4910N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
13.5 @ V
GS
= 10V
30
20 @ V
GS
= 4.5V
I
D
(A)
10
8
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
30
V
DS
Gate-Source Voltage
±20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
Units
V
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
10
8.2
±50
2.3
2.1
1.3
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
a
t <= 5 sec
t <= 5 sec
Symbol
R
θJC
R
θJA
Maximum
40
60
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4910_F
Analog Power
AM4910N
SPECIFICATIONS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
A
Test Conditions
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 250 uA
V
DS
= 0 V, V
GS
= 20 V
Limits
Unit
Min Typ Max
30
1
±100
o
V
nA
uA
A
13.5
20
mΩ
S
V
A
1
25
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
A
r
DS(on)
g
fs
V
SD
I
SM
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 15 A, T
J
= 55 C
V
DS
= 15 V, I
D
= 10 A
I
S
= 2.3 A, V
GS
= 0 V
o
20
15
40
0.7
5
Pulsed Source Current (Body Diode)
A
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15 V, V
GS
= 5 V,
I
D
= 10 A
V
DD
= 25 V, R
L
= 25
Ω
, I
D
= 1 A,
V
GEN
= 10 V
20
7.0
7.0
20
9
70
20
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power
(APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM4910_F
Analog Power
AM4910N
Typical Electrical Characteristics (N-Channel)
ID, DRAIN CURRENT (A)
V
GS
= 10V
6.0V
4.0V
40
30
20
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
2
1.7
1.4
1.1
0.8
0.5
0
10
20
30
40
50
4.5V
6.0V
10V
3.0V
10
0
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
1.6
Figure 2. On-Resistance with Drain Current
1.4
V
GS
= 10V
I
D
= 10A
0.05
I
D
= 10A
Normalized R (on)
DS
1.2
RDS(ON), ON-Resistance
(OHM )
0.04
0.03
0.02
1.0
0 .8
T
A
= 25 C
0.01
0
2
4
6
8
10
o
0 .6
-50
-2 5
0
25
50
75
10 0
12 5
150
T
J
Juncat ion T emperature (C)
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
V
D
=5V
50
-55C
IS, REVERSE DRAIN CURRENT (A)
100
V
GS
= 0V
10
I
D
Drain Current (A)
25C
40
30
125C
20
10
0
0
1
2
3
4
5
6
V
GS
Ga te to S o urc e Vo lta ge (V)
1
T
A
= 125 C
o
0.1
25 C
o
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM4910_F
Analog Power
AM4910N
Typical Electrical Characteristics (N-Channel)
Vgs Gate to Source Voltage ( V )
10
8
6
4
2
I
D
=10a
CAPACITANCE (pF)
1600
1200
800
Coss
Ciss
f = 1MHz
V
GS
= 0 V
400
Crss
0
0
0
4
8
12
16
20
24
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, Gate Charge (nC)
Figure 7. Gate Charge Characteristics
Vth, Gate-Source Thresthold Voltage
(V)
2.4
I
D
= 250mA
Figure 8. Capacitance Characteristics
50
P(pk), Peak Transient Power (W)
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25
50
V
DS
= V
GS
40
SINGLE PULSE
RqJA = 125C/W
TA = 25C
30
20
10
75 100 125 150 175
o
0
0.001
0.01
0.1
1
10
100
TA, AMBIENT TEMPERATURE ( C)
t1, TIME (sec)
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
qJA
(t) = r(t) * R
qJA
R
qJA
= 125 C/W
P(pk)
t
1
t
2
0.01
SINGLE PULSE
T
J
- T
A
= P * R
qJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM4910_F
Analog Power
AM4910N
Package Information
SO-8: 8LEAD
H x 45°
5
PRELIMINARY
Publication Order Number:
DS-AM4910_F
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