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BAT54T

Description
0.2 A, 30 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size276KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAT54T Overview

0.2 A, 30 V, 3 ELEMENT, SILICON, SIGNAL DIODE

MCC
Features
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAT54T
THRU
BAT54ST
150mWatt, 30Volt
Schottky Barrier Diode
Ultra-Small Surface Mount Package
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient andESD Protection
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
MCC
Part Number
BAT54T
BAT54AT
BAT54CT
BAT54ST
Device
Marking
L1
L2
L3
L4
Type
Single
Dual
Dual
Dual
Pin
Configuration
Figure 1
Figure 2
Figure 3
Figure 4
SOT-523
A
D
Maximum Ratings
DC Blocking Voltage
Average Rectified Output Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ T
A
= 25 C
Storage Temperature Range
Junction Temperature
Thermal Resistance
Junction to Ambient
V
R
I
O
I
FRM
I
FSM
P
D
T
stg
T
j
R
qJA
B
C
30V
200mA
300mA
600mA
150mW
-65 C to 12
5
C
-65 C to 12
5
C
667°C/W
E
G
K
H
J
Electrical Characteristics @ 25 C Unless Otherwise Specified
Ratings
Symbol
Max.
240mV
320mV
400mV
500mV
1000mV
2 A
>30V
10pF
Notes
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
I
R
=100uA
Measured at
1.0MHz, V
R
=1.0V
IF = 10mA ;
IR = 10mA ~1.0mA,
RL = 100
DIM
A
B
C
D
E
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
NOTE
Forward Voltage
V
F
Reverse Current
Reverse Breakdown
Voltage
Total Capacitance
Reverse Recovery
Time
I
R
V
(BR)
C
T
t
rr
5nS
www.mccsemi.com
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Revision: A
2011/01/01
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