BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV19WS-V-G
BAV20WS-V-G
BAV21WS-V-G
TYPE
DIFFERENTIATION
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
ORDERING CODE
BAV19WS-V-G-18 or BAV19WS-V-G-08
BAV20WS-V-G-18 or BAV20WS-V-G-08
BAV21WS-V-G-18 or BAV21WS-V-G-08
TYPE MARKING
AS
AT
AU
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Continuous reverse voltage
TEST CONDITION
SYMBOL
BAV19WS-V-G
BAV20WS-V-G
BAV21WS-V-G
BAV19WS-V-G
Repetitive peak reverse voltage
Forward continuous current
(1)
Rectified current (average) half wave
recitification with resistive load
(1)
Repetitive peak forward current
(1)
Surge forward current
Power dissipation
(1)
SYMBOL
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
F
I
F(AV)
VALUE
100
150
200
120
200
250
250
200
625
1
200
UNIT
V
V
V
V
V
V
mA
mA
mA
A
mW
BAV20WS-V-G
BAV21WS-V-G
f 50 Hz,
= 180 °C
t < 1 s, T
J
= 25 °C
I
FRM
I
FSM
P
tot
Note
(1)
Valid provided that leads are kept at ambient temperature
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
(1)
Storage temperature range
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
VALUE
650
150
- 65 to + 175
UNIT
K/W
°C
°C
Note
(1)
Valid provided that leads are kept at ambient temperature
Rev. 1.0, 16-May-12
Document Number: 83423
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
BAV19WS-V-G
BAV20WS-V-G
BAV21WS-V-G
BAV19WS-V-G
BAV20WS-V-G
BAV21WS-V-G
PART
SYMBOL
V
F
V
F
I
R
I
R
I
R
I
R
I
R
I
R
r
f
C
D
t
rr
5
1.5
50
MIN.
TYP.
MAX.
1
1.25
100
15
100
15
100
15
UNIT
V
V
nA
μA
nA
μA
nA
μA
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
V
R
= 100 V, T
j
= 100 °C
Leakage current
V
R
= 150 V
V
R
= 150 V, T
j
= 100 °C
V
R
= 200 V
V
R
= 200 V, T
j
= 100 °C
Dynamic Forward resistance
Diode capacitance
Reverse recovery time
I
F
= 10 mA
V
R
= 0 V, f = 1 MHz
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
I
F
- Forward Current (mA)
100
T
j
= 100 °C
P
tot
- Admissible Power Dissipation (W)
250
200
150
100
50
10
25 °C
1
0.1
0.01
0
18858
0.2
0.4
0.6
0.8
1
18864
0
0
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (°C)
V
F
- Forward
Voltage
(V)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 3 -
Admissible Power Dissipation vs. Ambient Temperature
I
O
, I
F
- Admissible Forward Current (A)
0.2
DC current I
F
Current (rectif.) I
O
0.1
r
f
- Dynamic Forward Resistance
(Ω)
0.3
100
10
0
0
30
60
90
120
150
1
1
18861
10
100
18859
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
Fig. 2 -
Admissible Forward Current vs. Ambient Temperature
Fig. 4 -
Dynamic Forward Resistance vs. Forward Current
Rev. 1.0, 16-May-12
Document Number: 83423
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com
Vishay Semiconductors
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18863
1000
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
100
10
Reverse
Voltage
1
BAV19WS-V-G
V
R
= 100
V
BAV20WS-V-G
V
R
= 150
V
BAV21WS-V-G
V
R
= 200
V
0.1
0
18862-2
C
D
- Diode Capacitance (pF)
T
j
= 25
°
C
40
80
120
160
200
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse
Voltage
(V)
Fig. 5 -
Leakage Current vs. Junction Temperature
Fig. 6 -
Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-323
1.15 (0.045)
0.8 (0.031)
0.2 (0.008)
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
0.40 (0.016)
0.20 (0.008)
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
1.5 (0.059)
1.1 (0.043)
0° to 8
°
0.1 (0.004) max.
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
1.6 (0.063)
17443
Rev. 1.0, 16-May-12
Document Number: 83423
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000