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BAV23

Description
0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size198KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BAV23 Overview

0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV23 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components2
Processing package descriptionPLASTIC PACKAGE-4
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSEPARATE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2500 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage250 V
Maximum average forward current0.2250 A
Surface mount switching diode
FEATURES
Continuous reverse voltage:max.75V
Switching speed:50ns.
Repetitive peak reverse voltage:max.250V
Repetitive peak forward current:max.625mA
BAV23
Pb
Lead-free
APPLICATIONS
General application.
SOT-143
ORDERING INFORMATION
Type No.
BAV23
Marking
L30
Package Code
SOT-143
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous forward current
Repetitive peak forward current
Surge current
t=1μs
t=1ms
t=1s
single diodes
double diodes
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
d
T
j
T
STG
Limits
250
200
225
125
625
9
3
1.7
250
150
-65 to +150
Unit
V
V
mA
mA
A
mW
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
http://www.luguang.cn
mail:lge@luguang.cn
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