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BAV303

Description
0.2 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size686KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAV303 Overview

0.2 A, SILICON, SIGNAL DIODE

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAV300
THRU
BAV303
Features
Saving Space
Silicon Epitaxial Planar Diodes
Hermetic Sealed Parts
Fits onto SOD-323/SOT-23 footprints
Electrical data identical with the devices BAV100…BAV103
Switching Diodes
Maximum Ratings
Continuous Reverse
Voltage
BAV300
BAV301
BAV302
BAV303
Repetitive Peak Reverse
Voltage
BAV300
BAV301
BAV302
BAV303
Forward DC Current
Repetitive Peak Forward
Current
Surge Forward Current
Thermal Resistance
Junction to Ambient
Junction temperature
Storage temperature Range
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
MICROMELF
50V
100V
150V
200V
60V
120V
200V
250V
250mA
625mA
1.0A
500K/W
175℃
-65 to + 175℃
T
A
=25℃
V
R
Cathode Mark
T
A
=25℃
V
RRM
I
F
I
FRM
I
FSM
R
thJA
T
j
T
stg
T
A
=25℃
f=50Hz, T
A
=25℃
T
P
=1s, T
j
=25℃
Note 2
C
B
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
V
F
Maximum Leakage current
BAV300
BAV300
BAV301
BAV301
BAV302
BAV302
BAV303
BAV303
Maximum Leakage current
BAV300
BAV301
BAV302
BAV303
Diode Capacitance
Maximum Reverse recovery
time
Differential Forward
Resistance
1.00V
100nA
15μA
100nA
15μA
100nA
15μA
100nA
15μA
60V
120V
200V
250V
1.5pF
50ns
5.0
I
F
= 100mA ,T
A
=25℃
V
R
=50V
V
R
=50V, Tj=100℃
V
R
=100V
V
R
=100V, Tj=100℃
V
R
=150V
V
R
=150V, Tj=100℃
V
R
=200V
V
R
=200V, Tj=100℃
I
R
=100μA, tP/T=0.01,
tP=0.3ms
DIM
A
B
C
DIMENSIONS
INCHES
MIN
.071
.004
.047
MAX
.079
.008
.051
MIN
1.8
.10
1.20
MM
MAX
2.0
.20
1.30
NOTE
I
R
SUGGESTED SOLDER
PAD LAYOUT
0.039
V
(BR)
0.055”
C
D
t
rr
r
F
V
R
=0V, f=1.0MHz
I
F
=10mA, I
R
=30mA
I
rr
=3.0mA, R
L
=100Ω
0.030”
I
F
=10mA
Notes:1.Lead in Glass Exemption Applied, see EU Directive Annex 5.
2
2.mounted on epoxy-glass hard tissue, Fig.4 35
μm
copper clad, 0.9 mm
copper area per electrode
Revision: A
www.mccsemi.com
1 of 3
2011/01/01

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BAV303 BAV300 BAV301 BAV302
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