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Datasheet> All Categories > Discrete semiconductor> The transistor> BCX53-16
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BCX53-16

Description
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size281KB，2 Pages
ManufacturerCentral Semiconductor
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BCX53-16 Overview

1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCX53-16 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1

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Download Datasheet
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51, BCX52,
and BCX53 types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
current general purpose amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-89 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ
JA
BCX51
45
45
BCX52
60
60
5.0
1.0
1.5
100
200
1.3
-65 to +150
96
BCX53
100
80
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=125°C
IEBO
VEB=5.0V
BVCBO
IC=100µA (BCX51)
45
BVCBO
IC=100µA (BCX52)
60
BVCBO
IC=100µA (BCX53)
100
BVCEO
IC=10mA (BCX51)
45
BVCEO
IC=10mA (BCX52)
60
BVCEO
IC=10mA (BCX53)
80
VCE(SAT)
IC=500mA, IB=50mA
VBE(ON)
VCE=2.0V, IC=500mA
hFE
VCE=2.0V, IC=5.0mA
40
hFE
VCE=2.0V, IC=150mA
63
hFE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10)
63
hFE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16)
100
hFE
VCE=2.0V, IC=500mA
25
fT
VCE=5.0V, IC=10mA, f=100MHz
TYP
MAX
100
10
100
0.5
1.0
250
160
250
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
MHz
R5 (20-November 2009)

BCX53-16 Related Products

BCX53-16 BCX51-10 BCX51-16 BCX51_10 BCX52-10 BCX52-16 BCX53-10
Description 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR Si, POWER TRANSISTOR Si, POWER TRANSISTOR Si, POWER TRANSISTOR Si, POWER TRANSISTOR Si, POWER TRANSISTOR Si, POWER TRANSISTOR
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
surface mount YES YES YES Yes YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE single SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER amplifier AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON silicon SILICON SILICON SILICON
Is it lead-free? Contains lead Contains lead Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible incompatible
Maker Central Semiconductor Central Semiconductor Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 - PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 - 3 3 3
Reach Compliance Code _compli unknown unknown - unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A - 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 45 V 45 V - 60 V 60 V 80 V
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 63 100 - 63 100 63
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 - R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609 code e0 e0 e0 - e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP - PNP PNP PNP
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W - 1.2 W 1.2 W 1.2 W
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz - 50 MHz 50 MHz 50 MHz
Base Number Matches 1 1 1 - 1 1 -

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