BCX56-10 datasheet, PDF - EEWORLD Datasheet

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BCX56-10: Description1 A, 80 V, NPN, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size280KB，2 Pages; ManufacturerCentral Semiconductor

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BCX56-10 Overview

1 A, 80 V, NPN, Si, POWER TRANSISTOR

BCX56-10 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Base Number Matches	1

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BCX54

BCX55

BCX56

SURFACE MOUNT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX54, BCX55,

and BCX56 types are NPN Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

current general purpose amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BCX54

BCX55

5.0

1.0

1.5

100

200

1.3

-65 to +150

BCX56

100

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=125°C

IEBO

VEB=5.0V

BVCBO

IC=100µA (BCX54)

BVCBO

IC=100µA (BCX55)

BVCBO

IC=100µA (BCX56)

100

BVCEO

IC=10mA (BCX54)

BVCEO

IC=10mA (BCX55)

BVCEO

IC=10mA (BCX56)

VCE(SAT)

IC=500mA, IB=50mA

VBE(ON)

VCE=2.0V, IC=500mA

hFE

VCE=2.0V, IC=5.0mA

hFE

VCE=2.0V, IC=150mA

hFE

VCE=2.0V, IC=150mA

(BCX54-10, BCX55-10, BCX56-10)

hFE

VCE=2.0V, IC=150mA

(BCX54-16, BCX55-16, BCX56-16)

100

hFE

VCE=2.0V, IC=500mA

VCE=5.0V, IC=10mA, f=100MHz

TYP

MAX

100

0.5

1.0

250

160

250

130

UNITS

µA

MHz

R5 (20-November 2009)

BCX56-10 Related Products

	BCX56-10	BCX54-10	BCX54-16	BCX54_10	BCX55-10	BCX55-16	BCX56-16
Description	1 A, 80 V, NPN, Si, POWER TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243	POWER TRANSISTOR
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-F3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	-	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	3	3	-	3	3	3
Reach Compliance Code	_compli	unknown	unknown	-	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
Base Number Matches	1	1	1	-	1	-	-
Shell connection	-	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	-	1 A	1 A	-	1 A	1 A	1 A
Collector-emitter maximum voltage	-	45 V	45 V	-	60 V	60 V	80 V
Configuration	-	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	63	100	-	63	100	100
JESD-30 code	-	R-PSSO-F3	R-PSSO-F3	-	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
JESD-609 code	-	e0	e0	-	e0	e0	e0
Number of components	-	1	1	-	1	1	1
Number of terminals	-	3	3	-	3	3	3
Maximum operating temperature	-	150 °C	150 °C	-	150 °C	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	NPN	-	NPN	NPN	NPN
Maximum power dissipation(Abs)	-	1.2 W	1.2 W	-	1.2 W	1.2 W	1.2 W
Certification status	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	-	YES	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	FLAT	FLAT	-	FLAT	FLAT	FLAT
Terminal location	-	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	130 MHz	130 MHz	-	130 MHz	130 MHz	130 MHz

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