BCX55-16 datasheet, PDF - EEWORLD Datasheet

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BCX55-16: Description1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243; CategoryDiscrete semiconductor The transistor; File Size280KB，2 Pages; ManufacturerCentral Semiconductor

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BCX55-16 Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243

BCX55-16 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

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BCX54

BCX55

BCX56

SURFACE MOUNT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX54, BCX55,

and BCX56 types are NPN Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

current general purpose amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BCX54

BCX55

5.0

1.0

1.5

100

200

1.3

-65 to +150

BCX56

100

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=125°C

IEBO

VEB=5.0V

BVCBO

IC=100µA (BCX54)

BVCBO

IC=100µA (BCX55)

BVCBO

IC=100µA (BCX56)

100

BVCEO

IC=10mA (BCX54)

BVCEO

IC=10mA (BCX55)

BVCEO

IC=10mA (BCX56)

VCE(SAT)

IC=500mA, IB=50mA

VBE(ON)

VCE=2.0V, IC=500mA

hFE

VCE=2.0V, IC=5.0mA

hFE

VCE=2.0V, IC=150mA

hFE

VCE=2.0V, IC=150mA

(BCX54-10, BCX55-10, BCX56-10)

hFE

VCE=2.0V, IC=150mA

(BCX54-16, BCX55-16, BCX56-16)

100

hFE

VCE=2.0V, IC=500mA

VCE=5.0V, IC=10mA, f=100MHz

TYP

MAX

100

0.5

1.0

250

160

250

130

UNITS

µA

MHz

R5 (20-November 2009)

BCX55-16 Related Products

	BCX55-16	BCX54-10	BCX54-16	BCX54_10	BCX55-10	BCX56-10	BCX56-16
Description	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	1 A, 80 V, NPN, Si, POWER TRANSISTOR	POWER TRANSISTOR
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	-	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PSSO-F3	PLASTIC PACKAGE-3
Contacts	3	3	3	-	3	3	3
Reach Compliance Code	unknow	unknown	unknown	-	unknown	_compli	unknow
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR	-	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	-	1 A	-	1 A
Collector-emitter maximum voltage	60 V	45 V	45 V	-	60 V	-	80 V
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	100	63	100	-	63	-	100
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	-	R-PSSO-F3	-	R-PSSO-F3
JESD-609 code	e0	e0	e0	-	e0	-	e0
Number of components	1	1	1	-	1	-	1
Number of terminals	3	3	3	-	3	-	3
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	-	NPN	-	NPN
Maximum power dissipation(Abs)	1.2 W	1.2 W	1.2 W	-	1.2 W	-	1.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified
surface mount	YES	YES	YES	-	YES	-	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	FLAT	FLAT	FLAT	-	FLAT	-	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	-	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	-	SILICON
Nominal transition frequency (fT)	130 MHz	130 MHz	130 MHz	-	130 MHz	-	130 MHz
Base Number Matches	-	1	1	-	1	1	-

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