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BCX56-16

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size143KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BCX56-16 Overview

POWER TRANSISTOR

BCX56-16 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionPLASTIC, SC-62, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
Rev. 08 — 22 June 2007
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1.
Product overview
Package
NXP
BC639
[2]
BCP56
BCX56
[1]
[2]
Type number
[1]
PNP complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC640
BCP53
BCX53
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
Low-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
80
1
1.5
250
160
250
Unit
V
A
A

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Description POWER TRANSISTOR NPN medium power transistors 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN medium power transistors 1 A, 80 V, NPN, Si, POWER TRANSISTOR NPN medium power transistors
Is it lead-free? Lead free - Lead free Lead free - Lead free -
Is it Rohs certified? conform to conform to conform to conform to conform to conform to -
Maker NXP NXP NXP NXP NXP NXP -
Parts packaging code SOT-89 TO-92 SC-73 SC-73 TO-92 SOT-89 -
package instruction PLASTIC, SC-62, 3 PIN PLASTIC, SC-43A, 3 PIN PLASTIC, SC-73, 4 PIN PLASTIC, SC-73, 4 PIN PLASTIC, SC-43A, 3 PIN PLASTIC, SC-62, 3 PIN -
Contacts 3 3 4 4 3 3 -
Reach Compliance Code compli unknow compli compli compli compli -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Shell connection COLLECTOR - COLLECTOR COLLECTOR - COLLECTOR -
Maximum collector current (IC) 1 A - 1 A 1 A - 1 A -
Collector-emitter maximum voltage 80 V - 80 V 80 V - 80 V -
Configuration SINGLE - SINGLE SINGLE - SINGLE -
Minimum DC current gain (hFE) 100 - 63 100 - 63 -
JESD-30 code R-PSSO-F3 - R-PDSO-G4 R-PDSO-G4 - R-PSSO-F3 -
JESD-609 code e3 - e3 e3 - e3 -
Humidity sensitivity level 1 - 1 1 - 1 -
Number of components 1 - 1 1 - 1 -
Number of terminals 3 - 4 4 - 3 -
Maximum operating temperature 150 °C - 150 °C 150 °C - 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR -
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 - 260 260 - 260 -
Polarity/channel type NPN - NPN NPN - NPN -
Maximum power dissipation(Abs) 1 W - 1.5 W 1.5 W - 1 W -
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified -
surface mount YES - YES YES - YES -
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) - Tin (Sn) -
Terminal form FLAT - GULL WING GULL WING - FLAT -
Terminal location SINGLE - DUAL DUAL - SINGLE -
Maximum time at peak reflow temperature 30 - 30 30 - 30 -
transistor applications AMPLIFIER - SWITCHING SWITCHING - AMPLIFIER -
Transistor component materials SILICON - SILICON SILICON - SILICON -
Nominal transition frequency (fT) 130 MHz - 180 MHz 180 MHz - 130 MHz -
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