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BCX56-10

Description
1 A, 80 V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size143KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BCX56-10 Overview

1 A, 80 V, NPN, Si, POWER TRANSISTOR

BCX56-10 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionPLASTIC, SC-62, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
Rev. 08 — 22 June 2007
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1.
Product overview
Package
NXP
BC639
[2]
BCP56
BCX56
[1]
[2]
Type number
[1]
PNP complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC640
BCP53
BCX53
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
Low-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
80
1
1.5
250
160
250
Unit
V
A
A

BCX56-10 Related Products

BCX56-10 BC639-10 BCP56-10 BCP56-16 BC639-16 BCX56-16 BCX56-16.115
Description 1 A, 80 V, NPN, Si, POWER TRANSISTOR NPN medium power transistors 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN medium power transistors POWER TRANSISTOR NPN medium power transistors
Is it lead-free? Lead free - Lead free Lead free - Lead free -
Is it Rohs certified? conform to conform to conform to conform to conform to conform to -
Maker NXP NXP NXP NXP NXP NXP -
Parts packaging code SOT-89 TO-92 SC-73 SC-73 TO-92 SOT-89 -
package instruction PLASTIC, SC-62, 3 PIN PLASTIC, SC-43A, 3 PIN PLASTIC, SC-73, 4 PIN PLASTIC, SC-73, 4 PIN PLASTIC, SC-43A, 3 PIN PLASTIC, SC-62, 3 PIN -
Contacts 3 3 4 4 3 3 -
Reach Compliance Code compli unknow compli compli compli compli -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Shell connection COLLECTOR - COLLECTOR COLLECTOR - COLLECTOR -
Maximum collector current (IC) 1 A - 1 A 1 A - 1 A -
Collector-emitter maximum voltage 80 V - 80 V 80 V - 80 V -
Configuration SINGLE - SINGLE SINGLE - SINGLE -
Minimum DC current gain (hFE) 63 - 63 100 - 100 -
JESD-30 code R-PSSO-F3 - R-PDSO-G4 R-PDSO-G4 - R-PSSO-F3 -
JESD-609 code e3 - e3 e3 - e3 -
Humidity sensitivity level 1 - 1 1 - 1 -
Number of components 1 - 1 1 - 1 -
Number of terminals 3 - 4 4 - 3 -
Maximum operating temperature 150 °C - 150 °C 150 °C - 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR -
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 - 260 260 - 260 -
Polarity/channel type NPN - NPN NPN - NPN -
Maximum power dissipation(Abs) 1 W - 1.5 W 1.5 W - 1 W -
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified -
surface mount YES - YES YES - YES -
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) - Tin (Sn) -
Terminal form FLAT - GULL WING GULL WING - FLAT -
Terminal location SINGLE - DUAL DUAL - SINGLE -
Maximum time at peak reflow temperature 30 - 30 30 - 30 -
transistor applications AMPLIFIER - SWITCHING SWITCHING - AMPLIFIER -
Transistor component materials SILICON - SILICON SILICON - SILICON -
Nominal transition frequency (fT) 130 MHz - 180 MHz 180 MHz - 130 MHz -

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