The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package.
They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W
into 4Ω
or 8Ω load.
PNP complements are BD202 and BD204
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CSM
I
B
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
I
C
I
CM
Collector Current (non-repetitive peak value,t
p
max.2 ms)
Base Current
Total Device Dissipation
@ T
C
= 25°
Junction Temperature
Storage Temperature range
Collector Current
BD201
BD203
BD201
BD203
Value
45
60
60
60
5.0
8
12
25
3
60
150
-65 to +200
Unit
V
V
V
A
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-mb
Ratings
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
70
2.08
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1/3
NPN BD201 – BD203
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CEO
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
Ratings
Collector Cutoff Current
Test Condition(s)
V
CE
=30 V, I
B
=0V
Min
-
-
-
60
45
60
5
-
-
-
-
30
30
25
7
1.5
2.5
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.2
1
0.5
-
-
-
-
1
1.5
2
1.5
-
-
-
-
-
-
1
Unit
mA
mA
mA
V
V
V
V
CE(SAT)
V
BE(SAT)
V
BE
h
FE
f
hfe
f
T
I
s/b
h
FE1
/h
FE2
t
on
T
off
BD201
BD203
BD201
Collector Cutoff Current
V
CB
=40 V, I
E
=0V
T
j
=150°C
BD203
BD201
Emitter Cutoff Current
V
BE
=5 V, I
C
=0
BD203
BD201
Collector-Base Breakdown
I
C
=1 m A, I
E
= 0
Voltage
BD203
BD201
Collector Emitter
I
C
=200 m A, I
B
= 0
Breakdown Voltage (*)
BD203
BD201
Emitter Base Breakdown
I
E
=1 mA, I
C
=0
Voltage
BD203
BD201
I
C
=3 A, I
B
=300 mA
BD203
Collector-Emitter saturation
Voltage (*)
BD201
I
C
=6 A, I
B
=600 mA
BD203
BD201
Base-Emitter saturation
I
C
=6 A, I
B
=600 mA
Voltage (*)
BD203
BD201
Base Emitter Voltage (*)
I
C
=3 A, V
CE
=2 V
BD203
I
C
=3 A, V
CE
=2 V
BD201
DC Current Gain (*)
I
C
=2 A, V
CE
=2 V
BD203
BD201
Cut-off frequency
I
C
=300 mA, V
CE
=3 V
BD203
I
C
=300 mA, V
CE
=3 V BD201
Transition frequency
f= 1MHz
BD203
Forward bias second
BD201
V
CE
=40 V,t
p
= 0.1 s
breakdown collector
T
amb
= 25 °C
BD203
current
BD201
DC current gain
I
C
=1 A, V
CE
=2 V
BD203
BD201
Turn-on time
BD203
I
Con
=2 A
I
Bon
= -I
Boff
=200 mA BD201
Turn-off time
BD203
V
V
-
KHz
MHz
A
-
µs
4
(*) Pulse conditions : tp < 300
µs, δ
=2%
18/10/2012
COMSET SEMICONDUCTORS
3/3
NPN BD201 – BD203
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
Case :
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
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