INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD227/229/231
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= -0.15A
·Complement
to Type BD226/228/230
APPLICATIONS
·Designed
for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD227
V
CBO
Collector-Base Voltage
BD229
BD231
BD227
V
CEO
Collector-Emitter Voltage
BD229
BD231
BD227
V
CER
Collector-Emitter
Voltage(R
BE
= 1kΩ)
BD229
BD231
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
≤62℃
Junction Temperature
Storage Temperature Range
VALUE
-45
-60
-100
-45
-60
-80
-45
-60
-100
-5
-1.5
-3.0
12.5
150
-65~150
V
A
A
W
℃
℃
V
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
7
100
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD227/229/231
MIN
TYP.
MAX
UNIT
BD227
Collector-Emitter
Sustaining Voltage
-45
V
CEO(SUS)
BD229
I
C
= -100mA ; I
B
= 0
-60
V
BD231
-80
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.1A
B
-0.8
V
V
BE(
on
)
I
CBO
Base-Emitter On Voltage
I
C
= -1A; V
CE
= -2V
V
CB
= -30V; I
E
= 0
V
CB
= -30V; I
E
= 0,T
C
= 125℃
V
EB
= -5V; I
C
=0
-1.3
-0.1
-10
-10
V
μA
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
μA
h
FE-1
DC Current Gain
I
C
= -5mA ; V
CE
= -2V
25
h
FE-2
DC Current Gain
I
C
= -1A ; V
CE
= -2V
25
h
FE-3
DC Current Gain
I
C
= -0.15A ; V
CE
= -2V
40
250
f
T
Current-Gain—Bandwidth Product
I
C
= -50mA ; V
CE
= -5V
50
MHz
isc Website：www.iscsemi.cn
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