The BD246 series are PNP power transistors in a TO3PN envelope.
They are the power transistors for power amplifier and high-speed-switching applications.
The complementary is BD245, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Ratings
Collector-Emitter Voltage (I
C
= -30mA)
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
I
C
I
CM
T
mb
= 25° C
Value
-45
-60
-80
-100
-55
-70
-90
-115
-5.0
-10
-15
-3
80
-65 to +150
-65 to +150
Unit
V
V
CER
V
EBO
I
C
I
B
P
T
T
J
T
S
Collector-Emitter Voltage (R
BE
= 100
Ω)
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
1.56
42
Unit
°C / W
°C / W
25/09/2012
COMSET SEMICONDUCTORS
1/3
BD246, A, B, C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CES
Ratings
Collector- Emitter
Cut-off Current
V
CE
V
CE
V
CE
V
CE
Test Condition(s)
Min
-
Typ
-
Mx
-0.4
Unit
mA
= -55 V , V
BE
= 0
= -70 V , V
BE
= 0
= -90 V , V
BE
= 0
= -115 V , V
BE
= 0
I
CEO
Collector Cut-off
Current
Emitter Cut-off
Current
Collector- Emitter
Breakdown Voltage
(*)
V
CE
= -30 V , I
B
= 0
V
CE
= -60 V , I
B
= 0
V
E B
= -5 V , I
C
= 0
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
-
-
-0.7
mA
I
EBO
-
BD246
BD246A
BD246B
BD246C
-45
-60
-80
-100
40
20
4
-
-
-
-
20
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-1
-
-
-
-
-
-
-
-1
-4
-1.6
-3
-
mA
V
CEO
I
C
= -30 mA, I
B
= 0
V
h
FE
V
CE(SAT)
V
BE
h
fe
|h
fe
|
V
CE
= -4 V, I
C
= -1 A
DC Current Gain (*) V
CE
= -4 V, I
C
= -3 A
V
CE
= -4 V, I
C
= -10 A
I
C
= -3 A, I
B
= -300 mA
Collector-Emitter
saturation Voltage (*) I
C
= -10 A, I
B
= -2.5 A
V
CE
= -4 V, I
C
= -3 A
Base-Emitter
Voltage(*)
V
CE
= -4 V, I
C
= -10 A
Small Signal forward
V = -10 V, I
C
= -500 mA, f = 1MHz
Current Transfer ratio
CE
Small Signal forward
V = -10 V, I
C
= -500 mA, f = 1MHz
Current Transfer ratio
CE
-
V
V
-
-
RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE
TEMPERATURE
Symbol
Ratings
Test Condition(s)
Min
Typ
Mx
Unit
Turn-on Time
t
on
t
off
Turn-off Time
I
C
= -1 A , I
B(on)
= -100 mA , I
B(off)
=
100 mA
V
BE(off)
= 3.7 V , R
L
= 20
Ω ,
t
p
= 20
µs
dc
<
2%
I
C
= -1 A , I
B(on)
= -100 mA , I
B(off)
=
100 mA
V
BE(off)
= 3.7 V , R
L
= 20
Ω ,
t
p
= 20
µs
dc
<
2%
COMSET SEMICONDUCTORS
-
0.2
-
µs
-
0.8
-
25/09/2012
2/3
BD246, A, B, C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
15.20
1.90
4.60
3.10
Max.
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
0.35
5.35
20.00
19.60
0.95
4.80
Pin 1 :
Pin 2 :
Pin 3 :
Base
Collector
Emitter
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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