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BD63875EFV_10

Description
Silicon monolithic integrated circuits
File Size125KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

BD63875EFV_10 Overview

Silicon monolithic integrated circuits

1/4
STRUCTURE
PRODUCT SERIES
TYPE
FUNCTION
Silicon monolithic integrated circuits
Bipolar stepping motor driver
BD63875EFV
・PWM
constant current controllable two H bridge driver
・Built-in
translator circuit for CLK-IN control
・Full,
Half, and Quarter step modes
・Mix
decay control
○Absolute
maximum ratings(Ta=25℃)
Item
Supply voltage
Limit
Unit
-0.2½+36.0
V
1
W
1.45
Power dissipation
Pd
2
4.70
W
Input voltage for control pin
V
IN
-0.2½+5.5
V
RNF maximum voltage
V
RNF
0.7
V
3
Maximum output current
I
OUT
1.5
A/phase
4
3
Maximum output current(peak)
I
OUTPEAK
2.0
A/phase
Operating temperature range
T
opr
-25½+85
Storage temperature range
T
stg
-55½+150
Junction temperature
T
jmax
+150
1
70mm×70mm×1.6mm glass epoxy board. Derating in done at 11.6mW/℃ for operating above Ta=25℃.
2
4-layer recommended board. Derating in done at 37.6mW/℃ for operating above Ta=25℃.
3
Do not, however exceed Pd, ASO and Tjmax=150℃.
4
Pulse width tw≦1ms, duty 20%.
Symbol
V
CC1,2
○Recommended
operating conditions (Ta=-25½+85℃)
Item
Symbol
Min.
Supply voltage
V
CC1,2
19
Output current
I
OUT
-
5
Do not, however exceed Pd, ASO.
This product isn’t designed for protection against radioactive rays.
Typ.
24
1.0
Max.
28
1.2
5
Unit
V
A/phase
.
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