NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue
switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
Compliance to RoHS
.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
60
80
100
120
140
45
60
80
100
120
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
12
A
17/10/2012
COMSET SEMICONDUCTORS
1|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
Unit
I
B
Base Current
300
mA
P
T
Power Dissipation
@ T
mb
< 25°
62.5
Watts
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
R
thJ-MB
R
thJ-A
Ratings
From junction to mounting base
From junction to ambient in free air
Value
2
62.5
Unit
K/W
K/W
17/10/2012
COMSET SEMICONDUCTORS
2|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Min
Typ
Max
Unit
I
E
=0,V
CB
=V
CEO
Max
I
CBO
Collector Cutoff Current
I
E
=0,V
CB
=1/2
V
CBO
Max
T
J
=150°C
-
-
0.2
mA
-
-
2
mA
I
CEO
Collector Cutoff Current
I
E
=0, V
CE
=1/2
V
CEO
Max
-
-
0.5
mA
I
EBO
Emitter Cutoff Current
V
EB
=5 V, I
C
=0
-
-
5.0
mA
V
CEO
Collector-Emitter
Breakdown Voltage
I
C
=30 mA, I
B
= 0
I
C
=4 A, I
B
=16 mA
I
C
=3 A, I
B
=12 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
=5 A, I
B
=50 mA
45
60
80
100
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
2
V
V
-
-
2.5
V
BE(SAT)
Base-Emitter Saturation
Voltage (*)
I
C
=12 A, I
B
=50 mA
-
-
3
V
17/10/2012
COMSET SEMICONDUCTORS
3|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
C
=4 A, V
CE
=3 V
Min
-
-
Typ
-
-
Max
2.5
2.5
Unit
V
BE
h
FE
h
fe
BD643
BD645
Base-Emitter Voltage (*)
BD647
I
C
=3 A, V
CE
=3 V
BD649
BD651
BD643
BD645
V
CE
=3.0 V, I
C
=0.5 A BD647
BD649
BD651
V
CE
=3.0 V, I
C
=4 A
BD643
BD645
DC Current Gain (*)
BD647
V
CE
=3.0 V, I
C
=3 A
BD649
BD651
BD643
BD645
V
CE
=3.0 V, I
C
=8 A
BD647
BD649
BD651
V
CE
=3.0 V, I
C
=4 A
BD643
f=1MHz
BD645
Small Signal Current Gain
BD647
V
CE
=3.0 V, I
C
=3 A
f=1MHz
BD649
BD651
V
-
1900
-
750
750
-
-
-
-
-
-
1800
-
10
10
10
10
10
-
-
-
-
-
-
-
-
-
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
17/10/2012
COMSET SEMICONDUCTORS
4|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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