BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
D
Integrated gate protection diodes
D
Low noise figure
D
Low feedback capacitance
2
1
D
High cross modulation performance
D
Low input capacitance
D
High AGC-range
G
2
G
1
D
94 9279
13 579
3
4
12623
BF996S Marking: MH
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
S
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
V
DS
20
I
D
30
±I
G1/G2SM
10
P
tot
200
T
Ch
150
T
stg
–65 to +150
Unit
V
mA
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Document Number 85010
Rev. 3, 20-Jan-99
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BF996S
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Test Conditions
I
D
= 10
m
A, –V
G1S
= –V
G2S
= 4 V
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
BF996S
BF996SA
BF996SB
Type
Symbol
V
(BR)DS
±V
(BR)G1SS
±V
(BR)G2SS
±I
G1SS
±I
G2SS
I
DSS
I
DSS
I
DSS
–V
G1S(OFF)
–V
G2S(OFF)
4
4
9.5
Min
20
8
8
Typ
Max
Unit
V
V
V
nA
nA
mA
mA
mA
V
V
14
14
50
50
18
10.5
18
2.5
2.0
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power g
gain
AGC range
Noise figure
g
Test Conditions
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
D
G
ps
F
F
Min
15
Typ
18.5
2.2
1.1
25
10.8
25
18
1.0
1.8
Max
2.6
35
1.2
Unit
mS
pF
pF
fF
pF
dB
dB
dB
dB
dB
V
G1S
= 0, V
G2S
= 4 V
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
V
G2S
= 4 to –2 V, f = 800 MHz
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
40
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Document Number 85010
Rev. 3, 20-Jan-99
BF996S
Vishay Telefunken
Common Source S–Parameters
V
DS
, = 15 V , V
G2S
= 4 V , Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
I
D
/mA
f/MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
LOG
MAG
dB
–0.05
–0.15
–0.43
–0.70
–1.03
–1.33
–1.62
–1.92
–2.21
–2.49
–2.80
–3.07
–3.31
–0.05
–0.16
–0.48
–0.76
–1.11
–1.43
–1.75
–2.07
–2.40
–2.70
–3.03
–3.32
–3.59
–0.05
–0.17
–0.50
–0.81
–1.18
–1.52
–1.86
–2.20
–2.53
–2.86
–3.21
–3.50
–3.80
ANG
deg
–8.5
–17.7
–24.6
–32.1
–39.2
–45.8
–52.3
–58.7
–64.7
–70.7
–76.6
–82.5
–88.6
–9.0
–18.7
–26.0
–33.7
–41.2
–48.3
–55.1
–61.6
–67.9
–74.2
–80.2
–86.4
–92.3
–9.4
–19.4
–27.1
–35.0
–42.9
–50.3
–57.2
–63.9
–70.4
–76.8
–82.9
–89.0
–95.1
S21
LOG
MAG
dB
3.24
3.63
2.51
2.01
1.45
0.94
0.43
–0.10
–0.59
–1.12
–1.52
–1.93
–2.35
5.19
5.58
4.45
3.95
3.40
2.88
2.39
1.88
1.39
0.90
0.50
0.13
–0.28
6.07
6.44
5.31
4.80
4.23
3.72
3.22
2.72
2.24
1.74
1.34
0.95
0.56
ANG
deg
164.9
150.9
134.7
121.3
108.4
96.5
85.0
74.1
63.6
53.1
43.7
33.6
24.1
165.3
151.8
136.3
123.3
110.9
99.5
88.7
78.1
67.9
57.9
48.7
38.9
29.6
165.4
152.0
136.7
123.8
111.5
100.3
89.6
79.4
69.2
59.4
50.2
40.8
31.5
S12
LOG
MAG
dB
–56.84
–50.57
–48.51
–46.98
–46.40
–46.40
–47.02
–47.53
–47.81
–48.52
–48.53
–46.95
–44.44
–56.24
–49.97
–47.91
–46.48
–45.91
–45.91
–46.53
–47.13
–47.41
–48.21
–48.43
–47.04
–44.54
–55.74
–49.47
–47.41
–45.98
–45.41
–45.41
–46.13
–46.63
–47.00
–47.91
–48.33
–47.04
–44.53
ANG
deg
82.2
75.6
67.7
62.8
57.8
57.3
58.9
63.3
73.1
83.5
102.1
120.4
131.7
81.9
75.0
67.2
61.8
56.3
55.8
56.7
60.7
69.9
80.0
98.9
118.2
130.5
81.4
74.6
66.4
60.8
55.1
54.4
54.9
58.5
67.3
76.7
95.2
115.3
128.7
S22
LOG
MAG
dB
–0.08
–0.18
–0.29
–0.44
–0.59
–0.76
–0.91
–1.08
–1.26
–1.45
–1.57
–1.75
–1.92
–0.11
–0.21
–0.33
–0.47
–0.65
–0.81
–0.96
–1.12
–1.32
–1.49
–1.61
–1.79
–1.96
–0.15
–0.24
–0.36
–0.52
–0.68
–0.84
–1.02
–1.16
–1.35
–1.53
–1.66
–1.84
–2.00
ANG
deg
–3.4
–7.1
–9.7
–12.3
–15.1
–17.4
–19.7
–22.0
–24.3
–26.2
–28.4
–30.5
–32.7
–3.5
–7.2
–9.8
–12.6
–15.3
–17.8
–20.0
–22.4
–24.6
–26.6
–28.8
–31.0
–33.3
–3.6
–7.3
–10.0
–12.9
–15.7
–18.0
–20.4
–22.7
–25.0
–27.1
–29.4
–31.6
–33.9
5
10
15
Document Number 85010
Rev. 3, 20-Jan-99
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BF996S
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
300
P
tot
– Total Power Dissipation ( mW )
250
I
D
– Drain Current ( mA )
200
150
100
50
0
0
96 12159
22
20
18
16
14
12
10
8
6
4
2
0
20
40
60
80
100 120 140 160
12852
5V
V
DS
= 15V
4V
3V
2V
1V
0
V
G1S
= –1V
–1
–0.5
0.0
0.5
1.0
1.5
T
amb
– Ambient Temperature (
°C
)
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
32
28
I
D
– Drain Current ( mA )
24
20
16
0
12
8
4
V
G1S
= –1V
0
0
12849
Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0
V
G2S
= 4V
P
tot
=200mW
C
issg1
– Gate 1 Input Capacitance ( pF )
2V
1.5V
1V
0.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1
V
DS
=15V
V
G2S
=4V
f=1MHz
–0.5V
2
4
6
8
10
12
14
16
12853
–0.5
0.0
0.5
1.0
1.5
V
DS
– Drain Source Voltage ( V )
I
D
– Drain Current ( mA )
Figure 2. Drain Current vs. Drain Source Voltage
22
20
18
I
D
– Drain Current ( mA )
16
14
12
10
8
6
4
2
0
–1
12851
Figure 5. Gate 1 Input Capacitance vs. Drain Current
3.0
C
issg2
– Gate 2 Input Capacitance ( pF )
6V 5V 4V 3V
V
DS
= 15V
2V
1V
2.5
2.0
1.5
1.0
0.5
0
–2
–1
0
1
2
V
DS
=15V
V
G1S
=0
f=1MHz
0.5V
0
V
G2S
= –1V
–0.5
0.0
0.5
1.0
1.5
3
4
5
V
G1S
– Gate 1 Source Voltage ( V )
12854
V
G2S
– Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
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Document Number 85010
Rev. 3, 20-Jan-99
BF996S
Vishay Telefunken
2.0
C
oss
– Output Capacitance ( pF )
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
12856
20
V
G2S
=4V
f=1MHz
Im ( y ) ( mS )
11
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10 12 14 16 18 20
12857
f=1300MHz
1100MHz
900MHz
700MHz
500MHz
300MHz
100MHz
0
1
2
3
4
5
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
6
7
8
9
10
V
DS
– Drain Source Voltage ( V )
Re (y
11
) ( mS )
Figure 7. Output Capacitance vs. Drain Source Voltage
10
– Transducer Gain ( dB )
0
–10
–20
–30
–40
–50
–60
–2.0 –1.5 –1.0 –0.5 0.0
12855
Figure 10. Short Circuit Input Admittance
0
–5
Im ( y ) ( mS )
21
–10
–15
–20
15mA
1300MHz
–25
–15
12858
f= 200MHz
4V
3V
2V
1V
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=100MHz
300MHz
500MHz
0
–0.2V
–0.4V
–0.6V
–0.8V
V
G2S
=–1V
I
D
=5mA
10mA
700MHz
900MHz
1100MHz
S
21
2
0.5
1.0
1.5
2.0
–10
–5
0
5
10
15
20
V
G1S
– Gate 1 Source Voltage ( V )
Re (y
21
) ( mS )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
y
21s
– Forward Transadmittance ( mS )
20
18
16
14
12
10
8
6
4
2
0
0
12850
Figure 11. Short Circuit Forward Transfer Admittance
7
6
5
Im ( y ) ( mS )
22
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
V
DS
=15V
f=1MHz
4V
3V
2V
1100MHz
900MHz
700MHz
1V
4
3
2
1
100MHz
0
0.0
500MHz
300MHz
V
G2S
=0
2
4
6
8
10
12
14
0.5V
16
18
12859
0.5
1.0
1.5
2.0
2.5
3.0
I
D
– Drain Current ( mA )
Re (y
22
) ( mS )
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Output Admittance
Document Number 85010
Rev. 3, 20-Jan-99
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