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BUK9Y8R7-60E

Description
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56
File Size342KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9Y8R7-60E Overview

N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56

BUK9Y8R7-60E
20 February 2013
LF
PA
K
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
60
86
147
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
6.8
8.7
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 20 A; V
DS
= 48 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
9.7
-
nC
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