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BUL38D

Description
5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size64KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUL38D Overview

5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BUL38D Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current5 A
Maximum Collector-Emitter Voltage450 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor10
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220C package
·High
voltage ,high speed
·Integrated
antiparallel
collector-emitter diode
APPLICATIONS
·Designed
for use in lighting applications
and low cost switch-mode power supplies.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUL38D
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak (t
p
<5 ms)
Base current
Base current-Peak (t
p
<5 ms)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
800
450
9
5
10
2
4
80
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.56
UNIT
℃/W
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