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BUL510

Description
Silicon NPN Power Transistors
File Size38KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUL510 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage,high speed
APPLICATIONS
・Electronic
ballasts for
fluorescent lighting
・Switch
mode power supplies
・Electronic
transformer for
halogen lamp
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUL510
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Base current-Peak
Total power dissipation
Maximum operating junction temperature
Storage temperature
t
p
<5ms
T
C
=25℃
t
p
<5ms
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
450
9
10
18
3.5
7
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
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