INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUV41
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 0.8V (Max.) @I
C
= 3A
·High
Switching Speed
APPLICATIONS
·Designed
for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
V
BE
=-1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current- Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
300
200
7
15
20
3
5
120
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.46
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUV41
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.2A; I
B
= 0; L= 25mH
200
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 50mA; I
C
= 0
7
V
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
I
CER
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.15A
B
0.8
V
Collector-Emitter Saturation Voltage
I
C
= 6A ;I
B
= 0.6A
I
C
= 8A; I
B
= 1A
B
0.9
V
Collector-Emitter Saturation Voltage
1.2
V
Base-Emitter Saturation Voltage
I
C
= 6A ;I
B
= 0.6A
1.6
V
Base-Emitter Saturation Voltage
I
C
= 8A; I
B
= 1A
B
1.8
0.5
2.5
0.5
2.5
1.0
V
Collector Cutoff Current
V
CE
= 300V;R
BE
= 10Ω
V
CE
= 300V;R
BE
= 10Ω;T
C
=100℃
V
CE
= 300V;V
BE
= -1.5V
V
CE
= 300V;V
BE
= -1.5V;T
C
=100℃
V
EB
= 5V; I
C
= 0
mA
I
CEV
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
Switching Times, Resistive Load
μs
μs
μs
t
r
t
s
t
f
Rise Time
I
C
= 8A; I
B1
= 1A; V
CC
= 160V;
R
B2
= 2.5Ω; V
BB
= -5V, t
p
= 30μs
0.5
Storage Time
1.2
Fall Time
0.3
isc Website：www.iscsemi.cn
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