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BUX31

Description
isc Silicon NPN Power Transistors
File Size52KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUX31 Overview

isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·High
Switching Speed
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V (Min)-BUX31
= 450V (Min)-BUX31A
= 450V (Min)-BUX31B
·Low
Saturation Voltage
APPLICATIONS
·Designed
for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BUX31
V
CES
Collector- Emitter
Voltage(V
BE
= 0)
BUX31A
BUX31B
BUX31
V
CEO
Collector-Emitter
Voltage
BUX31A
BUX31B
V
EBO
I
C
I
CM
I
B
B
BUX31/A/B
MAX
800
900
1000
400
450
500
8
8
10
5
150
200
-65~200
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website:www.iscsemi.cn

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