INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·High
Switching Speed
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V (Min)-BUX31
= 450V (Min)-BUX31A
= 450V (Min)-BUX31B
·Low
Saturation Voltage
APPLICATIONS
·Designed
for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BUX31
V
CES
Collector- Emitter
Voltage(V
BE
= 0)
BUX31A
BUX31B
BUX31
V
CEO
Collector-Emitter
Voltage
BUX31A
BUX31B
V
EBO
I
C
I
CM
I
B
B
BUX31/A/B
MAX
800
900
1000
400
450
500
8
8
10
5
150
200
-65~200
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUX31
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BUX31A
BUX31B
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BUX31
I
CEV
Collector
Cutoff Current
BUX31A
BUX31B
I
EBO
h
FE
f
T
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= 4A; I
B
= 0.8A
B
BUX31/A/B
CONDITIONS
MIN
400
TYP.
MAX
UNIT
I
C
= 0.2A ; I
B
= 0
450
500
1.0
2.0
1.3
0.1
1.0
0.1
1.0
0.1
1.0
2
8
15
V
V
V
V
I
C
= 8A; I
B
= 2A
B
I
C
= 4A; I
B
= 0.8A
B
V
CE
= 800V;V
BE
= -1.5V
V
CE
= 800V;V
BE
= -1.5V,T
C
=125℃
V
CE
= 900V;V
BE
= -1.5V
V
CE
= 900V;V
BE
= -1.5V,T
C
=125℃
V
CE
= 1000V;V
BE
= -1.5V
V
CE
= 1000V;V
BE
= -1.5V,T
C
=125℃
V
EB
= 8V; I
C
= 0
I
C
= 4A ; V
CE
= 3V
I
C
= 0.2A ;V
CE
= 10V
mA
mA
MHz
isc Website：www.iscsemi.cn
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