The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
V
CER
I
C
I
CM
I
B
P
t
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
I
B
= 0
I
E
= 0
I
C
= 0
V
BE
= -1.5V
R
BE
= 100Ω
t
p
= 10ms
@ T
C
= 25°
Value
125
160
7
160
150
20
28
4
120
200
-65 to +200
Unit
V
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.46
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
NPN BUX40
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0
I
CEO
I
CEX
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
I
S/B
E
S/B
f
T
t
on
t
s
t
f
Ratings
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Voltage
Collector Cutoff Current
Test Condition(s)
I
C
=200 mA
Min
125
7
-
-
-
-
15
8
-
-
-
4
1
15
8
-
-
-
Typ
-
-
-
-
-
-
-
-
0.6
0.9
1.7
-
-
-
-
0.35
0.85
0.14
Max
-
-
1
1
5
1
45
-
1.2
1.6
2
-
-
-
-
1.2
1
0.4
Unit
V
V
mA
mA
mA
-
V
A
A
MHz
I
C
=0A , I
E
=50 mA
V
CE
=100 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
Collector Cutoff Current
V
CE
= V
CEX
, V
BE
= -1.5V
T
case
= 125°C
Emitter Cutoff Current
V
EB
=5.0 V, I
C
=0
I
C
=10 A , V
CE
=4.0 V
DC Current Gain (*)
I
C
=15 A , V
CE
=4.0 V
I
C
=10 A , I
B
=1 A
Collector-Emitter saturation
Voltage (*)
I
C
=15 A , I
B
=1.88 A
Base-Emitter saturation Voltage (*) I
C
=15 A , I
B
=1.88 A
V
CE
=30 V , t
s
= 1s
Second breakdown collector
current
V
CE
=50 V , t
s
= 1s
V
clamp
=125 V
Clamped E
S/B
Collector current
L=500 µH
V
CE
=15 V , I
C
=1 A
Transition frequency
f=10 MHz
I
C
=15 A , I
B
=1.88 A
Turn-on time
V
CC
=30 V
Storage time
File time
I
C
=15 A , V
CC
=30 V
I
B1
= -I
B2
=1.88 A
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
NPN BUX40
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
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