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BUY69A

Description
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size69KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
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BUY69A Overview

10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3

BUY69A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
Maximum landing time (tf)1000 ns
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max3.3 V
NPN BUY69A
MULTIEPITAXIAL MESA NPN
The BUY69A is silicon multiepitaxial mesa NPN transistor in Jedec TO-3.
They are intended for horizontal deflection output stage of CTV receivers and high voltage, fast
switching and industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
EBO
V
CES
I
C
I
CM
I
B
P
t
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
B
= 0
I
C
= 0
I
C
= 0
t
p
= 10ms
@ T
C
= 25°C
Value
400
8
1000
10
15
3
100
200
-65 to +200
Unit
V
V
V
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.75
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
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