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BY399S

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    Fast recovery diode   
File Size160KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

BY399S Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

BY399S Parametric

Parameter NameAttribute value
Case StyleDO-27
IVA(A)3.0
VRRM (V)1000
IFSM (A)100
VF (V)1.25
@IVA(A)3.0
Maximum reverse current10.0
TRR(nS)250
classDiodes
BY396-BY399
Fast Recovery Rectifiers
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 3.0 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 27
Mechanical Data
Case:JEDEC DO-27,molded plastic
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
396
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BY
397
200
140
200
BY
398
400
280
400
3.0
BY
399
800
560
800
BY
399S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
100.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.25
10.0
200.0
250
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
32
22
- 55---- +150
- 55---- +150
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

BY399S Related Products

BY399S BY396 BY397 BY398 BY399
Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Case Style DO-27 DO-27 DO-27 DO-27 DO-27
IVA(A) 3.0 3.0 3.0 3.0 3.0
VRRM (V) 1000 100 200 400 800
IFSM (A) 100 100 100 100 100
VF (V) 1.25 1.25 1.25 1.25 1.25
@IVA(A) 3.0 3.0 3.0 3.0 3.0
TRR(nS) 250 150 150 150 250
class Diodes Diodes Diodes Diodes Diodes
Maximum reverse curre - 10.0 10.0 10.0 -

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