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BYT54M

Description
0.75 A, 1000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size220KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet View All

BYT54M Overview

0.75 A, 1000 V, SILICON, SIGNAL DIODE

BYT54M
Sintered Glass Junction Fast Avalanche Rectifier
VOLTAGE:1000V
CURRENT: 1.25A
SOD-57
Features
Glass passivated
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Mechanical Data
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at I =10mm
Peak Forward Surge Current
at tp=10ms,half sinewave
Maximum Forward Voltage at rated Forward Current
at IF=1.0A
Non-repetitive peak reverse avalanche energy
at I
BR(R)
=0.4A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Typical Thermal Resistance
Storage and Operating Junction Temperature
Ta =25
°C
Ta =150
°C
(Note 1)
(Note 2)
BYT54M
1000
700
1000
1.25
30
1.5
10
5.0
150.0
100
100
-65 to +175
units
V
V
V
A
A
V
mJ
V
RRM
V
RMS
V
DC
I
FAV
I
FSM
V
F
E
RSM
I
R
Trr
R
th(ja)
Tstg, Tj
µ
A
µ
A
nS
°C
/W
°C
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. on PC board with spacing 25 mm
http://www.luguang.cn
mail:lge@luguang.cn

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