BYV52HR
Aerospace 30 A - 200 V fast recovery rectifier
Features
■
■
■
■
■
■
Very small conduction losses
Negligible switching losses
High surge current capability
High avalanche energy capability
Hermetic package
Target radiation qualification:
– 150 krad (Si) low dose rate
– 3 Mrad high dose rate
Package mass: 10 g
ESCC qualified
Figure 1.
Device configuration
TO-254
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■
Description
Packaged in an hermetic TO-254 this device is
intended for use in medium voltage, high
frequency switching mode power supplies, high
frequency DC to DC converters, and other
aerospace applications.
The complete ESCC specification for this device
is available from the European space agency web
site. ST guarantees full compliance of qualified
parts with such ESCC detailed specifications.
Table 1.
Device summary
(1)
ESCC detailed
Quality level
specification
-
5103/030/01
Engineering
model
Flight part
Terminal 1: Cathode
3
Terminal 2: No connection
Terminal 3: Anode
The case is not connected to any lead
BYV52-200FSY1
BYV52-200FSYHRB
1
Order code
BYV52-200FSY1
BYV52-200FSYHRB
Lead
finish
Gold
Solder
dip
EPPL
-
I
F(AV)
V
RRM
T
j(max)
V
F (max)
30 A
Y
200 V
150 °C
1.15 V
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
April 2010
Doc ID 17395 Rev 1
1/8
www.st.com
8
Characteristics
BYV52HR
1
Characteristics
Table 2.
Symbol
Absolute maximum ratings
Characteristic
Forward surge current (per diode)
(1)
Repetitive peak reverse voltage
(2)
Average output rectified current (50% duty cycle):
(3)
Forward rms current (per diode)
Operating case temperature range
(4)
Junction temperature
Storage temperature range
(4)
Soldering temperature
(5)
Value
400
200
30
30
-55 to +150
+150
-55 to +150
+260
Unit
A
V
A
A
°C
°C
°C
°C
I
FSM
V
RRM
I
O
I
F(RMS)
T
OP
T
J
T
STG
T
SOL
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. For T
case
≥
+120°C, derate linearly to 0 A at +150°C.
4. For devices with hot solder dip lead finish all testing performed at T
amb
> +125 °C are carried out in a 100%
inert atmosphere.
5. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
Table 3.
Symbol
R
th (j-c)
Thermal resistance
Parameter
Junction to case
(1)
Value
0.9
Unit
°C/W
1. Package mounted on infinite heatsink.
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Doc ID 17395 Rev 1
BYV52HR
Table 4.
Symbol
s
Characteristics
Electrical measurements at ambiant temperature (per diode), T
amb
= 22 ±3 °C
Characteristic
Reverse current
Forward voltage
Breakdown voltage
Capacitance
Reverse recovery time
Relative thermal impedance,
junction to case
MIL-STD-750
test method
4016
4011
4021
4001
4031
3101
Limits
Test conditions
Min.
DC method, V
R
= 200 V
Pulse method, I
F
= 20 A
Pulse method, I
F
= 30 A
I
R
= 100 µA
V
R
= 10 V, F = 1 MHz
I
F
= 1 A, V
R
= 30 V,
dI
F
/dt = -50 A/µs
I
H
= 15 to 40 A, t
H
= 50 ms
I
M
= 50 mA, t
md
= 100 µs
-
-
-
200
-
-
Max.
25
1.01
1.15
-
400
55
µA
V
V
V
pF
ns
°C/W
Units
I
R
V
F1
(1)
V
F2(1)
V
BR
C
t
rr
Z
th(j-c)
(2)
Calculate
ΔV
F(3)
1. Pulse width
≤
300µs, duty cycle
≤
2%
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3. The limits for
ΔVF
shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
th(j-c)
limits specified in maximum ratings.
Table 5.
Symbol
Electrical measurements at high and low temperatures (per diode)
Characteristic
MIL-STD-750
test method
4016
Test conditions
(1)
Limits
Units
Min.
Max.
15
0.95
1.15
mA
V
V
I
R
Reverse current
T
case
= +125 (+0, -5) °C
DC method, V
R
= 200 V
T
case
= +125 (+0, -5) °C
pulse method, I
F
= 20 A
T
case
= +55 (+0, -5) °C
pulse method, I
F
= 20 A
-
-
-
V
F2
(2)
Forward voltage
4011
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width
≤
300µs, duty cycle
≤
2%
To evaluate the conduction losses use the following equation:
P = 0.74 x I
F(AV)
+ 1.00 x I
F2(RMS )
Doc ID 17395 Rev 1
3/8
Package information
BYV52HR
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 2.
Metal flange mount package (TO-254
(a)
), 3 lead dimension definitions
B
R1
H
E
D
ØF
G
C
A
1
R2
2
3
N
ØM
L
K
K
J
ØI
a. The terminal identification is specified by the device configuration. See
Figure 1
for terminal connections
4/8
Doc ID 17395 Rev 1
BYV52HR
Table 6.
Package information
Metal flange mount package (TO-254), 3-lead dimension values
Dimension in millimetres
Reference
Min.
A
B
C
D
E
ØF
G
H
ØI
(1)
J
K
L
ØM
N
R1
(2)
R2
(3)
1. 3 locations
2. Radius of heatsink flange corner - 4 locations
3. Radius of body corner - 4 locations
Dimlension in inches
Min.
0.535
0.535
0.790
0.248
0.039
0.138
0.665
0.270 BSC
Max.
0.545
0.545
0.800
0.264
0.154
0.154
0.685
Max.
13.84
13.84
20.32
6.7
3.9
3.9
17.4
6.86 BSC
13.59
13.59
20.07
6.3
1
3.5
16.89
0.89
3.81 BSC
3.81 BSC
12.95
3.05 Typ.
-
-
1.65 Typ.
1.14
0.035
0.150 BSC
0.150 BSC
0.045
14.5
0.510
0.120 Typ.
0.571
0.71
1
-
-
0.065
0.028
0.039
Doc ID 17395 Rev 1
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