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BZX55T6V2A

Description
SILICON EPITAXIAL PLANAR ZENER DIODES
File Size252KB,4 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BZX55T6V2A Overview

SILICON EPITAXIAL PLANAR ZENER DIODES

BZX55T Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Max. 0.5
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• Available with tighter tolerances
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
tot
T
j
T
S
Value
500
175
- 65 to + 175
Unit
mW
O
C
C
O
Maximum Thermal Resistance (T
a
= 25
O
C)
Parameter
Thermal Resistance Junction to Ambient Air
Symbol
R
thJA
Max.
300
Unit
K/W
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 200 mA
Symbol
V
F
Max.
1.5
Unit
V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/06/2007
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