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BZX84C3V9

Description
3.9 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size71KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZX84C3V9 Overview

3.9 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZX84C3V9 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
Certification statusNot Qualified
Nominal reference voltage3.9 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance5%
Working test current5 mA
BZX84C2V7–BZX84C51
Vishay Telefunken
350 mW Surface Mount Zener Diodes
Features
D
D
D
D
Planar die construction
350 mW Power dissipation
Zener voltages from 2.7V – 51V
Ideally suited for automated assembly processes
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Zener current (see figures 1–3 below)
Junction and storage
temperature range
Test Conditions
on ceramic substrate
10mm x 8mm x 0.7mm
Symbol
P
d
Value
350
Unit
mW
T
j
=T
stg
–55...+150
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on ceramic substrate 10mm x 8mm x 0.7mm
Symbol
R
thJA
Value
420
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward Voltage
Test Conditions
I
F
=10 mA
Type
Symbol
V
F
Min
Typ
Max
0.9
Unit
V
Document Number 85606
Rev. 1, 01-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
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