BZX84C…Series
SILICON PLANAR ZENER DIODES
This series of Zener diodes is offered in the
convenient, surface mount plastic SOT-23 package.
These devices are designed to provide voltage
regulation with minimum space requirement. They are
well suited for applications such as cellular phones,
hand held portables, and high density PC boards.
1
3
2
1. Anode 3. Cathode
SOT-23 Plastic Package
Features
• Zener breakdown voltage range – 2.0 V to 75 V
• Package designed for optimal automated board
assembly
• Small package size for high density applications
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
1)
1)
Symbol
P
D
R
θJA
T
j
,T
S
Value
350
417
- 65 to + 150
Unit
mW
O
C/W
O
Junction and Storage Temperature Range
Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina
C
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
BZX84C…Series
Electrical Characteristics
( T
a
= 25
O
C unless otherwise noted, V
F
< 0.9 V at I
F
= 10 mA)
Type
Marking
Code
A8
B8
C8
D8
E8
F8
H8
J8
K8
M8
N8
P8
R8
X8
Y8
Z8
A9
B9
C9
D9
E9
F9
H9
J9
K9
M9
N9
Marking
Code
P9
R9
X9
Y9
Z9
A0
B0
C0
D0
E0
F0
H0
V
Z1
(V)
@ I
ZT1
= 5 mA
1)
Min.
1.8
2.08
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
14.3
15.3
16.8
18.8
20.8
22.8
Nom.
2.0
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
V
Z1
Below
@ I
ZT1
= 2 mA
Min.
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom.
27
30
33
36
39
43
47
51
56
62
68
75
Max.
28.9
32
35
38
41
46
50
54
60
66
72
79
Max.
2.15
2.33
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
Z
ZT1
(Ω)
@ I
ZT1
=
5 mA
100
100
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
80
80
90
130
150
170
180
200
215
240
255
V
Z2
(V)
@ I
ZT2
= 1 mA
1)
Min.
-
-
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Max.
-
-
2.1
2.4
2.7
2.9
3.3
3.5
4
4.7
5.3
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
15.5
17
19
21.1
23.2
25.5
Z
ZT2
(Ω)
@ I
ZT2
=
1 mA
2)
-
-
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
2)
300
300
325
350
350
375
375
400
425
450
475
500
V
Z3
(V)
@ I
ZT3
= 20 mA
1)
Min.
-
-
2.6
3
3.3
3.6
3.9
4.1
4.4
4.5
5
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
Max.
-
-
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8
8.8
9.7
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Z
ZT3
(Ω)
@ I
ZT3
=
20 mA
-
-
50
50
50
40
40
30
30
15
15
10
6
6
6
6
8
10
10
10
15
20
20
20
20
25
25
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
50
55
60
70
80
90
100
110
120
130
140
Maximum Reverse
Leakage Current
I
R
@
µA
120
120
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
V
0.5
0.7
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
BZX84C2V0
BZX84C2V2
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
Type
V
Z2
Below
@ I
ZT2
= 0.1 mA
Min.
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Max.
28.9
32
35
38
41
46
50
54
60
66
72
79
V
Z3
Below
@ I
ZT3
= 10 mA
Min.
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Max.
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
73.2
80.2
Maximum Reverse
Leakage Current
I
R
@ V
R
µA
V
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
BZX84C47
BZX84C51
BZX84C56
BZX84C62
BZX84C68
BZX84C75
1)
2)
Tested with pulses tp = 20 ms.
The Zener impedance, Z
ZT2
, for the 27 through 75 volt types is tested at 0.5 mA rather than the test current of 0.1 mA used for V
Z2
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
Wireless Connectivity
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